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    IRFW630BTM Search Results

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    IRFW630BTM Price and Stock

    onsemi IRFW630BTM-FP001

    MOSFET N-CH 200V 9A D2PAK
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    DigiKey IRFW630BTM-FP001 Reel
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    Flip Electronics IRFW630BTM-FP001 4,000
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    Flip Electronics IRFW630BTM-FP001

    MOSFET N-CH 200V 9A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFW630BTM-FP001 Reel 4,000
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    Rochester Electronics LLC IRFW630BTM_FP001

    9A, 200V, 0.4OHM, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFW630BTM_FP001 Bulk 800
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    onsemi IRFW630BTM_FP001

    Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFW630BTM-FP001)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFW630BTM_FP001 Reel 0 Weeks, 2 Days 3,907
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    Fairchild Semiconductor Corporation IRFW630BTM_FP001

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    Bristol Electronics IRFW630BTM_FP001 74
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    Quest Components IRFW630BTM_FP001 59
    • 1 $1.9
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    • 100 $0.95
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    Rochester Electronics IRFW630BTM_FP001 800 1
    • 1 $0.4117
    • 10 $0.4117
    • 100 $0.387
    • 1000 $0.3499
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    IRFW630BTM Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFW630BTM Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFW630A Original PDF
    IRFW630BTM_FP001 Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFW630A Original PDF
    IRFW630BTM_FP001 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original PDF
    IRFW630BTM-FP001 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 9A D2PAK Original PDF

    IRFW630BTM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFW630B N-Channel MOSFET 200 V, 9 A, 400 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state


    Original
    IRFW630B PDF

    W630B

    Abstract: No abstract text available
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRFW630B IRFI630B O-263 W630B IRFW630BTM FP001 W630B PDF

    KTMC5400SM

    Abstract: SL7300 SL7300HX KTMC5850SM MARKING EA MOSFET FQB9P25TM FQB34N20 mosfet 1216 FQB34N20TM IRFW630BTM
    Text: Date Created: 3/16/2004 Date Issued: 3/25/2004 PCN # 20041103 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original
    168/500/1000hr 168hr 231ea 200/500/1000Cycle FQB34N20TM AM004 FQB9P25TM IRFW630BTM NFP001 KTMC5400SM SL7300 SL7300HX KTMC5850SM MARKING EA MOSFET FQB34N20 mosfet 1216 PDF