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    IRG7 Price and Stock

    Infineon Technologies AG IRG7PH50U-EP

    IGBT TRENCH 1200V 140A TO247AD
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    Infineon Technologies AG IRG7PH46UPBF

    IGBT TRENCH 1200V 130A TO-247AC
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    Rochester Electronics IRG7PH46UPBF 59 1
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    Infineon Technologies AG IRG7PH42UPBF

    IGBT TRENCH 1200V 90A TO-247AC
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    RS IRG7PH42UPBF Bulk 1
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    EBV Elektronik IRG7PH42UPBF 143 Weeks 400
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    Infineon Technologies AG IRG7PH35UPBF

    IGBT TRENCH 1200V 55A TO-247AC
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    Infineon Technologies AG IRG7T200CL12B

    IGBT MOD 1200V 390A POWIR 62
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    DigiKey IRG7T200CL12B Box 15
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    Find more IRG7 price and stock on Findchips.com

    IRG7 Datasheets (86)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7CH28UEF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH30K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH35UEF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH37K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH42UEF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH44K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH50K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH54K10EF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH73K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH73K10EF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH73UEF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH75K10EF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH75UEF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH81K10EF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7I313UPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 330V 20A 34W TO220ABFP Original PDF
    IRG7IA19UPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 360V 30A 35W TO220AB Original PDF
    IRG7PA19UPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 360V 50A 104W TO247AC Original PDF
    IRG7PG35U-EPBF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1000V 55A 210W TO247AD Original PDF
    IRG7PG35UPBF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1000V 55A 210W TO247AC Original PDF
    IRG7PG42UD-EPBF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1000V 85A 320W TO247AD Original PDF

    IRG7 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    igbt 50V 420A

    Abstract: irg7ic irg7i 105MH
    Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


    Original     		IRG7IC18FDPbF O-220AB igbt 50V 420A irg7ic irg7i 105MH PDF

    IRG7PH42UD1M

    Abstract: 30A, 600v RECTIFIER DIODE
    Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


    Original     		IRG7PH42UD1M 1300Vpk D-020D IRG7PH42UD1M 30A, 600v RECTIFIER DIODE PDF

    GE Refrigerator Compressor

    Abstract: 400v 20A ultra fast recovery diode 2245-2
    Text: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode


    Original     		IRG7RC10FDPbF EIA-481 EIA-541. EIA-481. GE Refrigerator Compressor 400v 20A ultra fast recovery diode 2245-2 PDF

    IRG7PH35UD1MPBF

    Abstract: No abstract text available
    Text: IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original     		IRG7PH35UD1MPbF 1300Vpk O-247AD TD-020Dâ IRG7PH35UD1MPBF PDF

    IRG7PH42UPBF

    Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U
    Text: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		6233A IRG7PH42UPbF IRG7PH42U-EP O-247AD IRG7PH42UPBF IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97636 IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7IA13UPbF O-220 PDF

    irg7ph50

    Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications


    Original     		IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbF RG7PH50K10DEPbF IRG7PH50K10D-EPBF IRG7PH50K10DPbF/IRG7PH50K10D-EPbF O-247AC O-247AD JESD47F) irg7ph50 IRG7PH50K10D 50A 1200V PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7RA13UPbF PDP TRENCH IGBT Key Parameters Features • Advanced Trench IGBT Technology  Optimized for Sustain and Energy Recovery circuits in PDP applications  Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency  High repetitive peak current capability


    Original     		IRG7RA13UPbF IGBJESD47F JSTD020D PDF

    irg7ic28u

    Abstract: IRG7IC28 irg7ic 038341 IRG7IC28UPBF irg7i
    Text: PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7IC28UPbF O-220AB irg7ic28u IRG7IC28 irg7ic 038341 IRG7IC28UPBF irg7i PDF

    irg7ph42ud2pbf

    Abstract: No abstract text available
    Text: Approved Not Released IRG7PH42UD2PbF IRG7PH42UD2-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses


    Original     		IRG7PH42UD2PbF IRG7PH42UD2-EP O-247AD PDF

    IRG7PH42U

    Abstract: No abstract text available
    Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


    Original     		IRG7PH42UD1M 1300Vpk IRG7PH42U PDF

    irg7ic

    Abstract: IRG7IC30FDPBF
    Text: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G


    Original     		IRG7IC30FDPbF O-220AB O-220AB irg7ic IRG7IC30FDPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		7636A IRG7IA13UPbF O-220 PDF

    IRG7PH42U

    Abstract: No abstract text available
    Text: IRG7PH42UD2PbF IRG7PH42UD2-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA 100% of the parts tested for 4X rated current (ILM)


    Original     		IRG7PH42UD2PbF IRG7PH42UD2-EP JESD47F) O-247AC O-247AD IRG7PH42U PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96271 IRG7CH54K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		IRG7CH54K10B PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97747 IRG7CH73K10B-R Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 s Short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution


    Original     		IRG7CH73K10B-R PDF

    IRG7CH44K10B

    Abstract: IRG7CH44
    Text: PD - 96270A IRG7CH44K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		6270A IRG7CH44K10B IRG7CH44K10B IRG7CH44 PDF

    irg7ph35upbf

    Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
    Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A PDF

    IRG7I313UPBF

    Abstract: JESD22-A114 irg7i313u IRG7
    Text: PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7I313UPbF O-220 IRG7I313UPBF JESD22-A114 irg7i313u IRG7 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive


    Original     		IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbFÂ IRG7PH50K10Dâ O-247AC O-247AD JESD47F) PDF

    IRG7CH50

    Abstract: Inverters el tape IRG7CH50UB
    Text: PD - 97628 IRG7CH50UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching


    Original     		IRG7CH50UB IRG7CH50 Inverters el tape IRG7CH50UB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96219 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD2PbF IRG7PH42UD2-EPbF Features • • • • • • • • Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA


    Original     		IRG7PH42UD2PbF IRG7PH42UD2-EPbF O-247AD PDF

    irg7ph35

    Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1
    Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses


    Original     		7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD irg7ph35 irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1 PDF