C469
Abstract: IRGPH40M
Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1029 IRGPH40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH40M
10kHz)
O-247AC
C-470
C469
IRGPH40M
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IRGPH40M
Abstract: 400V 10A 10KHz power MOSFET
Text: Preliminary Data Sheet PD - 9.1029A IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGPH40M
10kHz)
IRGPH40M
400V 10A 10KHz power MOSFET
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IRGPH40MD2
Abstract: 930 18a C479
Text: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH40MD2
10kHz)
O-247AC
C-480
IRGPH40MD2
930 18a
C479
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IRGPH40M
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1029A IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGPH40M
10kHz)
device890
IRGPH40M
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IRGPH40MD2
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH40MD2
10kHz)
O-247AC
C-480
IRGPH40MD2
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IRGPH40MD2
Abstract: C479
Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V
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IRGPH40MD2
10kHz)
O-247AC
C-480
IRGPH40MD2
C479
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IRGKI200F06
Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U
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IRGB420U
IRGP420U
IRGB430U
IRGP430U
IRGBC20K
IRGPC20K
IRGBC20K-S
IRGBC20M
IRGBC20M-S
IRGPC20M
IRGKI200F06
IRGNIN150M06
IRGKI120F06
IRGDDN600M06
IRGKI115U06
IRGBC20FD2
IRGTIN025M12
IRGTI140U06
IRGPC50U
IRGKI165F06
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IRGKI165F06
Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)
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OT-23)
IRLML2402*
IRLML2803
IRLML5103
IRLML6302*
IRGKI165F06
IRGDDN600M06
IRGDDN600K06
IRF7311
IRGNIN075
IRFK6H054
IRF7601
IRLI2203N
IRLML2803
IRLML5103
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TRANSISTOR 9642
Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
IRG4BC20F
IRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
TRANSISTOR 9642
9544 transistor
T0247 package
what is fast IGBT transistor
IRG4PC50U
Equivalent transistors for IRG4PC50U
IRG4BC20FD 600V 16 TO220
IRGPC40U
irg4ph50ud
IRGB440U
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IRGKI200F06
Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications
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O-220AB
IRG4BC40S
IRGBC20S
IRGBC30S
IRGBC40S
O-247AC
IRG4PC40S
IRGPC30S
IRGPC40S
10-30kHz)
IRGKI200F06
IRGNIN150M06
IRGTI165F06
IRGBC20FD2
IRGKI115U06
irgti140u06
IRG4PC40S
IRGPH40FD2
IRG4BC30UD
IRGNI115U06
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9544 transistor
Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
assIRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
IRG4BC30UD
9544 transistor
TRANSISTOR 9642
IRG4PC50U
irg4ph50ud
igbt failure
IRG4PC40UD2
HTGB
IRGPH60UD2
IRGBC20FD
rectifier IGBT
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IRG4PH40K
Abstract: IRGPH40K IRGPH40M
Text: PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4PH40K
IRG4PH40K
IRGPH40K
IRGPH40M
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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Untitled
Abstract: No abstract text available
Text: PD- 91577B IRG4PH40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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91577B
IRG4PH40KD
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irgph40md-2
Abstract: IRG4PH40KD IRGPH40KD2 IRGPH40MD2 MJ 14 x 1,5 - 4
Text: PD- 91577B IRG4PH40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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91577B
IRG4PH40KD
char52-7105
irgph40md-2
IRG4PH40KD
IRGPH40KD2
IRGPH40MD2
MJ 14 x 1,5 - 4
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930 18a
Abstract: IRGPH40MD2
Text: htemational S Rectifier Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V CES • Short circuit rated -10ps @125°C, V q E = 15V •Switching-loss rating includes all "tail" losses
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-10ps
10kHz)
IRGPH40MD2
00A/ps
O-247AC
930 18a
IRGPH40MD2
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Untitled
Abstract: No abstract text available
Text: International [^Rectifier Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT VCes = 1200V • Short circuit rated -10ps @ 12 5 °C , V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH40MD2
-10ps
10kHz)
00A/ps
O-247AC
C-480
0G2Q27Q
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Untitled
Abstract: No abstract text available
Text: International [^Rectifier Provisional Data Sheet PD - 9.1029A IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT c • Short circuit rated - 10|js @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGPH40M
10kHz)
D2315c
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1029 bitemational 11»]Rectifier IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to
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10kHz)
IRGPH40M
O-247AC
C-470
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Untitled
Abstract: No abstract text available
Text: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,
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IRG4PH40KD
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IRGPH30M
Abstract: No abstract text available
Text: In te rn a tio n a l S U F te c tifie r IGBTs Fast IGBTs for Medium Frequency 3-10 kHz range Power Applications Short-Circuit Rated - Optimized for Motor Control Applications FAST (cont.) 'c Part Number Continuous Collector Current VCES Collector to Emitter
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IRGDDN300M06
IRGDDN400M06
IRGDDN600M06
IRGRDN300M06
IRGRDN400M06
IRGPH30MD2
IRGPH40MD2
IRGPH50MD2
T0-247AC
IRGKIN025M12
IRGPH30M
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier PD- 9.1577 IRG4PH40KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tBC=10[is, @720V VCE start , T j= 1 2 5 ° C , V g e =15V
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IRG4PH40KD
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier P D - 9 .1 5 7 7 A IRG4PH40KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tBC=10[is, Vcc = 720V , Tj = 125°C, V g e =15V • Combines low conduction losses with high
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IRG4PH40KD
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WE VQE 24 E
Abstract: WE VQE 11 E WE VQE 24
Text: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V
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IRG4PH40K
WE VQE 24 E
WE VQE 11 E
WE VQE 24
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