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    Infineon Technologies AG IRHY597230CM

    Transistor MOSFET P-Channel 200V 8A 3-Pin TO-257AA - Bulk (Alt: IRHY597230CM)
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    Infineon Technologies AG IRHY57Z30CM

    Transistor MOSFET N-Channel 30V 18A 3-Pin TO-257AA - Bulk (Alt: IRHY57Z30CM)
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    Infineon Technologies AG IRHYB63130CM

    Transistor MOSFET N-Channel 100V 20A 3-Pin TO-257AA - Bulk (Alt: IRHYB63130CM)
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    Infineon Technologies AG IRHYS67134CMSCS-01

    Transistor MOSFET N-Channel 150V 19A 3-Pin TO-257AA - Bulk (Alt: IRHYS67134CMSCS-01)
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    Infineon Technologies AG IRHYS9A93034CM

    Transistor MOSFET P-Channel 60V 30A 3-Pin TO-257AA - Bulk (Alt: IRHYS9A93034CM)
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    IRHY Datasheets (98)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHY3130CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY3130CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHY3230CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY3230CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHY4130CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY4130CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHY4230CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY4230CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHY53034CM International Rectifier RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Original PDF
    IRHY53130CM International Rectifier 100V 100kRad JANS Certified Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package. Also available in Radiation Levels up to 1000KRad. Original PDF
    IRHY53130CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY53230CM International Rectifier RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Original PDF
    IRHY53Z30CM International Rectifier 30V, N-CHANNEL R5 TECHNOLOGY Original PDF
    IRHY53Z30CM International Rectifier Original PDF
    IRHY54034CM International Rectifier RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Original PDF
    IRHY54034CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY54130CM International Rectifier 100V 100kRad JANS Certified Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package. Also available in Radiation Levels up to 1000KRad. Original PDF
    IRHY54230CM International Rectifier RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Original PDF
    IRHY54Z30CM International Rectifier 30V, N-CHANNEL R5 TECHNOLOGY Original PDF
    IRHY54Z30CM International Rectifier Original PDF

    IRHY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRHY597130CM

    Abstract: IRHY593130CM T0-257AA
    Text: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides


    Original     		PDF O-257AA) IRHY597130CM IRHY597130CM IRHY593130CM 5M-1994. O-257AA. T0-257AA

    IRHY53230CM

    Abstract: IRHY54230CM IRHY57230CM IRHY58230CM
    Text: PD - 93827A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57230CM 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHY57230CM 100K Rads (Si) IRHY53230CM 300K Rads (Si) RDS(on) 0.21Ω 0.21Ω ID 12.5A 12.5A IRHY54230CM 600K Rads (Si)


    Original     		PDF 3827A O-257AA) IRHY57230CM IRHY57230CM IRHY53230CM IRHY54230CM IRHY58230CM 1000K MIL-STD-750, MlL-STD-750,

    IRHY53Z30CM

    Abstract: IRHY54Z30CM IRHY57Z30CM IRHY58Z30CM
    Text: PD - 93824A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57Z30CM 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHY57Z30CM 100K Rads (Si) IRHY53Z30CM 300K Rads (Si) RDS(on) 0.03Ω 0.03Ω ID 18A* 18A* IRHY54Z30CM 600K Rads (Si)


    Original     		PDF 3824A O-257AA) IRHY57Z30CM IRHY57Z30CM IRHY53Z30CM IRHY54Z30CM IRHY58Z30CM 1000K MIL-STD-750, MlL-STD-750,

    JANSR2N7380

    Abstract: Accelerometers datasheet 8303a IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM
    Text: PD - 91274E IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si)


    Original     		PDF 91274E IRHY7130CM JANSR2N7380 MIL-PRF-19500/614 O-257AA) IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM 1000K JANSR2N7380 Accelerometers datasheet 8303a

    2N7594

    Abstract: PD-97193A
    Text: PD-97193A 2N7594T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67234CM Radiation Level 100K Rads (Si) IRHYS63234CM 300K Rads (Si) RDS(on) I D 0.22Ω 12A 0.22Ω 12A


    Original     		PDF PD-97193A 2N7594T3 O-257AA) IRHYS67234CM IRHYS63234CM 90MeV/ 5M-1994. O-257AA. 2N7594 PD-97193A

    95818

    Abstract: No abstract text available
    Text: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)


    Original     		PDF O-257AA) IRHYB67230CM IRHYB63230CM IRHYB64230CM IRHYB68230CM 1000K 90MeV/ 5M-1994. O-257AA. 95818

    2N7588T3

    Abstract: 2N7588 isd 1710
    Text: PD-96986A 2N7588T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYS63130CM 300K Rads (Si) 0.042Ω


    Original     		PDF PD-96986A 2N7588T3 O-257AA) IRHYS67130CM IRHYS63130CM 90MeV/ 5M-1994. O-257AA. 2N7588 isd 1710

    JANSR2N7380

    Abstract: IRHY3130CM IRHY4130CM IRHY7130CM IRHY8130CM
    Text: PD - 91274D IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si)


    Original     		PDF 91274D IRHY7130CM JANSR2N7380 MIL-PRF-19500/614 O-257AA) IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM 1000K JANSR2N7380

    IRHY57230CMSE

    Abstract: No abstract text available
    Text: PD - 93822 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57230CMSE 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY57230CMSE 100K Rads (Si) 0.23Ω 12A TO-257AA International Rectifier’s R5TM technology provides


    Original     		PDF O-257AA) IRHY57230CMSE IRHY57230CMSE O-257AA MIL-STD-750, MlL-STD-750,

    irf 343

    Abstract: IRHYB63130CM IRHYB67130CM isd 1710
    Text: PD-95841A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYB63130CM 300K Rads (Si) 20A* 0.042Ω Low-Ohmic


    Original     		PDF PD-95841A O-257AA) IRHYB67130CM IRHYB67130CM IRHYB63130CM O-257AA 90MeV/ 5M-1994. O-257AA. irf 343 isd 1710

    T0257AA

    Abstract: IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965
    Text: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number


    Original     		PDF 94318C IRHY57133CMSE JANSR2N7488T3 O-257AA) MIL-PRF-19500/705 5M-1994. O-257AA. T0257AA IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965

    Untitled

    Abstract: No abstract text available
    Text: PD-96986A 2N7588T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYS63130CM 300K Rads (Si) 0.042Ω


    Original     		PDF PD-96986A 2N7588T3 O-257AA) IRHYS67130CM IRHYS67130CM IRHYS63130CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-93823C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHY57234CMSE Radiation Level 100K Rads (Si) RDS(on) 0.41Ω ID 9.6A International Rectifier’s R5 TM technology provides


    Original     		PDF PD-93823C O-257AA) IRHY57234CMSE 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-96899 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072Ω IRHYS593Z30CM 300K Rads (Si) 0.072Ω ID -20A* -20A*


    Original     		PDF PD-96899 O-257AA) IRHYS597Z30CM IRHYS597Z30CM IRHYS593Z30CM O-257AA 5M-1994. O-257AA O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-95841B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYB63130CM 300K Rads (Si) 0.042Ω 20A* International Rectifier’s R6 TM technology provides


    Original     		PDF PD-95841B O-257AA) IRHYB67130CM IRHYB63130CM 90MeV/ 5M-1994. O-257AA.

    MOSFET 800V 10A

    Abstract: IRHY7G30CMSE
    Text: PD - 93973C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		PDF 93973C O-257AA) IRHY7G30CMSE IRHY7G30CMSE MIL-STD-750, MlL-STD-750, O-257AA MOSFET 800V 10A

    IRHYB63134CM

    Abstract: IRHYB67134CM
    Text: PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYB63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides


    Original     		PDF PD-96997 O-257AA) IRHYB67134CM IRHYB67134CM IRHYB63134CM 90MeV/ 5M-1994. O-257AA.

    95837

    Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
    Text: PD-95837 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides


    Original     		PDF PD-95837 O-257AA) IRHY67C30CM IRHY67C30CM IRHY63C30CM 90MeV/ 5M-1994. O-257AA. 95837 PD-95837 RG 2006 10A 600V

    IRHYS63130CM

    Abstract: IRHYS67130CM
    Text: PD-96986 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYS63130CM 300K Rads (Si) 20A* 0.042Ω International Rectifier’s R6 TM technology provides


    Original     		PDF PD-96986 O-257AA) IRHYS67130CM IRHYS67130CM IRHYS63130CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original     		PDF PD-95818B O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-96925 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original     		PDF PD-96925 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD - 93973 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		PDF O-257AA) IRHY7G30CMSE

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD-9.1400A International I R Rectifier R EPETITIVE AVALANCHE AND IRHY9130CM IRHY93130CM JANSR2N7382 JANSF2N7382 [REF: MIL'^ channel dv/dt RATED HEXFET TRANSISTOR RAD HARD -100Volt, 0.30Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technol­


    OCR Scan     		PDF -100Volt,

    Untitled

    Abstract: No abstract text available
    Text: International SIRectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD •100 Volt, 0.30Q, RAO HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


    OCR Scan     		PDF IRHY9130CM JANSR2N7382 MIL-PRF-19500/615] Liguria49