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Infineon Technologies AG IRHYS67134CM Transistor MOSFET N-Channel 150V 19A 3-Pin TO-257AA - Bulk (Alt: IRHYS67134CM)
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Avnet Americas	IRHYS67134CM	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IRHYS67134CMSCS-01 Transistor MOSFET N-Channel 150V 19A 3-Pin TO-257AA - Bulk (Alt: IRHYS67134CMSCS-01)
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Avnet Americas	IRHYS67134CMSCS-01	Bulk			50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRHYS67134CM Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRHYS67134CM		International Rectifier			Original	PDF

IRHYS67134CM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2n7590 Abstract: No abstract text available Text: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω	Original	PDF	PD-96930B 2N7590T3 O-257AA) IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA. 2n7590
2N7590 Abstract: No abstract text available Text: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω	Original	PDF	PD-96930B 2N7590T3 O-257AA) IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA. 2N7590
Untitled Abstract: No abstract text available Text: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω	Original	PDF	PD-96930B 2N7590T3 O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA.
2N7590T3 Abstract: No abstract text available Text: PD-96930C 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω	Original	PDF	PD-96930C 2N7590T3 O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM O-257AA 90MeV/ 5M-1994. O-257AA. 2N7590T3
Untitled Abstract: No abstract text available Text: PD-96930 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides	Original	PDF	PD-96930 O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA.
IRHYS63134CM Abstract: IRHYS67134CM Text: PD-96930A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides	Original	PDF	PD-96930A O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA.
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	PDF	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065