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    IRLI530 Search Results

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    IRLI530 Price and Stock

    Vishay Siliconix IRLI530GPBF

    MOSFET N-CH 100V 9.7A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRLI530GPBF Tube 915 1
    • 1 $2.66
    • 10 $2.66
    • 100 $2.66
    • 1000 $0.94928
    • 10000 $0.94928
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    Infineon Technologies AG IRLI530N

    MOSFET N-CH 100V 12A TO220AB FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRLI530N Tube 50
    • 1 -
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    • 100 $1.7726
    • 1000 $1.7726
    • 10000 $1.7726
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    Vishay Siliconix IRLI530G

    MOSFET N-CH 100V 9.7A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRLI530G Tube 1,000
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    • 1000 $1.85
    • 10000 $1.85
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    Infineon Technologies AG IRLI530NPBF

    MOSFET N-CH 100V 12A TO220AB FP
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    DigiKey IRLI530NPBF Tube
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    Rochester Electronics IRLI530NPBF 9 1
    • 1 $0.5115
    • 10 $0.5115
    • 100 $0.4808
    • 1000 $0.4348
    • 10000 $0.4348
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    Vishay Intertechnologies IRLI530GPBF

    LOGIC MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRLI530GPBF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRLI530GPBF Reel 1,000
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    • 1000 $0.85765
    • 10000 $0.73294
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    TME IRLI530GPBF 1
    • 1 $1.02
    • 10 $0.92
    • 100 $0.82
    • 1000 $0.68
    • 10000 $0.68
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    Find more IRLI530 price and stock on Findchips.com

    IRLI530 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRLI530A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRLI530A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRLI530A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRLI530G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLI530G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.7A TO220FP Original PDF
    IRLI530G International Rectifier HEXFET Power Mosfet Scan PDF
    IRLI530G International Rectifier HEXFET Power MOSFET Scan PDF
    IRLI530G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRLI530G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRLI530GPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.7A TO220FP Original PDF
    IRLI530GPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Scan PDF
    IRLI530N International Rectifier HEXFET Power MOSFET Original PDF
    IRLI530N International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRLI530N with Standard Packaging Original PDF
    IRLI530N International Rectifier HEXFET Power MOSFET Original PDF
    IRLI530N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLI530NPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRLI530N with Lead Free Packaging Original PDF
    IRLI530NPBF International Rectifier Original PDF

    IRLI530 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SiHLI530G

    Abstract: IRLI530G SiHLI530G-E3 IRLI530
    Text: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		IRLI530G, SiHLI530G O-220 18-Jul-08 IRLI530G SiHLI530G-E3 IRLI530 PDF

    IRL530N

    Abstract: No abstract text available
    Text: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V


    Original     		IRLI530NPbF O-220 I840G IRL530N PDF

    SiHLI530G

    Abstract: No abstract text available
    Text: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		IRLI530G, SiHLI530G O-220 18-Jul-08 PDF

    IRFI840G

    Abstract: EK24
    Text: IRLI530NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K "


    Original     		IRLI530NPbF O-220 I840G IRFI840G EK24 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 100V l


    Original     		1350B IRLI530N O-220 elimina33 PDF

    SiHLI530G

    Abstract: No abstract text available
    Text: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		IRLI530G, SiHLI530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V


    Original     		IRLI530NPbF O-220 I840G PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		IRLI530G, SiHLI530G O-220 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		IRLI530G, SiHLI530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    DSA0051623

    Abstract: IRL530N IRLI530N
    Text: PRELIMINARY PD -9.1350 IRLI530N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.10Ω


    Original     		IRLI530N O-220 DSA0051623 IRL530N IRLI530N PDF

    1350B

    Abstract: IRL530N IRLI530N
    Text: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V


    Original     		1350B IRLI530N O-220 1350B IRL530N IRLI530N PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95030 IRLI530GPbF • Lead-Free www.irf.com 1 2/19/04 IRLI530GPbF 2 www.irf.com IRLI530GPbF www.irf.com 3 IRLI530GPbF 4 www.irf.com IRLI530GPbF www.irf.com 5 IRLI530GPbF 6 www.irf.com IRLI530GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		IRLI530GPbF O-220 PDF

    1350B

    Abstract: IRL530N IRLI530N
    Text: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V


    Original     		1350B IRLI530N O-220 1350B IRL530N IRLI530N PDF

    SiHLI530G

    Abstract: No abstract text available
    Text: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		IRLI530G, SiHLI530G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRL530N

    Abstract: No abstract text available
    Text: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V


    Original     		IRLI530NPbF O-220 I840G IRL530N PDF

    1350B

    Abstract: IRL530N IRLI530N
    Text: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-184-41 IRLI530N HEXFET TO-220 PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive


    Original     		IRLI530N O-220 1350B IRLI530N 1350B IRL530N PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95030 IRLI530GPbF • Lead-Free Document Number: 91311 2/19/04 www.vishay.com 1 IRLI530GPbF Document Number: 91311 www.vishay.com 2 IRLI530GPbF Document Number: 91311 www.vishay.com 3 IRLI530GPbF Document Number: 91311 www.vishay.com 4 IRLI530GPbF Document Number: 91311


    Original     		IRLI530GPbF O-220 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95030 IRLI530GPbF • Lead-Free Document Number: 91311 2/19/04 www.vishay.com 1 IRLI530GPbF Document Number: 91311 www.vishay.com 2 IRLI530GPbF Document Number: 91311 www.vishay.com 3 IRLI530GPbF Document Number: 91311 www.vishay.com 4 IRLI530GPbF Document Number: 91311


    Original     		IRLI530GPbF O-220 08-Mar-07 PDF

    IRL530N

    Abstract: IRLI530N
    Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD -9.1350 IRLI530N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


    Original     		IRLI530N IRL530N IRLI530N PDF

    731 MOSFET

    Abstract: AN609 IRLI530G SiHLI530G
    Text: IRLI530G_RC, SiHLI530G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRLI530G SiHLI530G AN609, 9236m 4404m 8066m 9430m 1445m 02-Nov-10 731 MOSFET AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: International I« Rectifier 4055452 0015^04 3T7 HEXFET® Power MOSFET INTERNATIONAL RECTIFIER PD-9.844 IIN R IRLI530G Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 5V


    OCR Scan     		IRLI530G T0-220 S5452 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1350B International Rectifier I R IRLI530N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS © Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


    OCR Scan     		1350B IRLI530N PDF

    IRLI530G

    Abstract: No abstract text available
    Text: PD-9.844 International S Rectifier IRLI530G HEXFET Power MOSFET • • • • Isolated Package High Voltage Isolation^ 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive • RDS on Specified at V gs=4V & 5V • Fast Switching • Ease of Paralleling


    OCR Scan     		IRLI530G O-220 IRLI530G PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9 .1350B In te rn a tio n a l IQ R Rectifier IRLI530N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated


    OCR Scan     		1350B IRLI530N PDF