NE425S01
Abstract: NE425S01-T1 NE425S01-T1B
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB
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NE425S01
NE425S01
NE425S01-T1
NE425S01-T1B
24-Hour
NE425S01-T1
NE425S01-T1B
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nec k 813
Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE33284A
NE33284A
NE33284A-SL
NE33284A-T1
NE33284A-T1A
nec k 813
s11 diode shottky
IEI1207
NE33284A-SL
NE33284A-T1
NE33284A-T1A
NE33284AS
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NE429M01
Abstract: NE429M01-T1
Text: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, GA = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE
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NE429M01
NE429M01
NE429M01-T1
24-Hour
NE429M01-T1
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pt 7313
Abstract: NE425S01 NE425S01-T1 NE425S01-T1B
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz
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NE425S01
NE425S01
NE425S01-T1
NE425S01-T1B
24-Hour
pt 7313
NE425S01-T1
NE425S01-T1B
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PT 4207
Abstract: NE325S01 NE325S01-T1 NE325S01-T1B gm 572
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz Noise Figure, NF dB
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NE325S01
NE325S01
NE325S01-T1
NE325S01-T1B
24-Hour
PT 4207
NE325S01-T1
NE325S01-T1B
gm 572
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lg 8993
Abstract: LG 631 NE4210M01 NE4210M01-T1 13352 8582
Text: NE4210M01 SUPER LOW NOISE HJ FET FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • SUPER LOW NOISE FIGURE: 0.8 dB TYP at f = 12 GHz 2.5 • HIGH ASSOCIATED GAIN: 11.0 dB TYP at f = 12 GHz 2.0 16 1.5 12 1.0 8 20 VDS = 2 V ID = 10 mA • GATE WIDTH: WG = 200 µm
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NE4210M01
NE4210M01
1e-10
38e-12
027e-12
24-Hour
lg 8993
LG 631
NE4210M01-T1
13352
8582
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NE32984D
Abstract: NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE
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NE32984D
NE32984D
NE32984D-S
NE32984D-T1
NE32984D-SL
84D-SL
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NE32984D-S
NE32984D-SL
NE32984D-T1
K 3264 fet
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transistor D227
Abstract: nec D227 transistor k 4212 fet D3052 NE23383B transistor d115 NEC D74 transistor d145 transistor D95 D1542
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm hetero junction to create high mobility electrons.
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NE23383B
NE23383B
transistor D227
nec D227
transistor k 4212 fet
D3052
transistor d115
NEC D74
transistor d145
transistor D95
D1542
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NE325S01-T1B
Abstract: NE325S01 NE325S01-T1
Text: C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: ≤ 0.20 µm
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NE325S01
NE325S01
NE325S01-T1B
NE325S01-T1
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NE332
Abstract: NE33284AS nec k 813 s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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low noise, hetero junction fet
Abstract: NE32984D NE32984D-S NE32984D-T1 IS21S
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
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NE32984D
NE32984D
NE32984D-S
NE32984D-T1
24-Hour
low noise, hetero junction fet
NE32984D-S
NE32984D-T1
IS21S
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NE434S01
Abstract: NE434S01-T1 NE434S01-T1B TVRO
Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz • GATE WIDTH: 280 µm • TAPE & REEL PACKAGING OPTION AVAILABLE • LOW COST PLASTIC PACKAGE
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NE434S01
NE434S01
NE434S01-T1B
NE434S01-T1
24-Hour
NE434S01-T1
NE434S01-T1B
TVRO
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NE425S01
Abstract: NE425S01-T1 NE425S01-T1B
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB
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NE425S01
NE425S01
NE425S01-T1
NE425S01-T1B
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NE425S01-T1B
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TLCS-42
Abstract: 42c40 BM4211B TMP42C40P TMP42C60P TLCS-42, 47
Text: T O S H IB A TMP42C40/60 C M O S 4 -B IT M IC R O C O N T R O LLE R TM P42C40P, TMP42C60P T h e 42C 40/6 0 a re co m p act, h ig h speed 4 -b it sin g le ch ip m icro co m p u te rs in te g ra tin g R O M , RA M in p u t/o u tp u t po rts, an d in te rv a l tim e r. T h e 42C 40/60 a re th e sta n d a rd ty p e d evices in th e TLC S-42 CM O S series.
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TMP42C40/60
TMP42C40P,
TMP42C60P
42C40/60
TLCS-42
TMP42C40P
BM4211B
TMP42C60P
42c40
BM4211B
TLCS-42, 47
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Untitled
Abstract: No abstract text available
Text: MOTOROLA bôE D SEMICONDUCTOR TECHNICAL DATA MOTM b 3 h 7 e S 2 0 0 ^ 5 21 1 blfl MO TO RO LA SC L06IC 68030/040 ECL/TTL Clock Driver MC10H640 MC100H640 The M C10H/100H640 generates the necessary clocks for the 68030, 68040 and sim ilar m icroprocessors. It is guaranteed to meet the clock
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L06IC)
MC10H640
MC100H640
C10H/100H640
OH/100H640
BR1333
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2SC4866
Abstract: 2SC48 2SC4865 2SC4885 2SC4899
Text: /]' I â § f f l h 7 > v ^ M — fe iS iB • 2 S C 4 8 6 5 Z # « É : VHF/UHF É w í S S t ^ i M W Í o mmr-bZo it s : ^ % ë. s H æ të ë « s Vc e o V 8 I c b o (M ) Ve b o (V) 2 hFE Ä 'J ' =# « Ê : VHF/UHF I Ö S « i g t f l S S o : { S i t e f T £>•£o rrrj^Ji^T'-fe-Sc
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2SC4865
20tnA
2SC48
900MHz
20inA
2SC4866
2SC4885
2SC4899
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