Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6665 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).
|
Original
|
ENN6665
2SC5699
2SC5699]
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. unit : mm 2062A [2SJ289] 4.5 1.6 0.4 1.0 2.5 4.25max
|
Original
|
ENN6609
2SJ289
2SJ289]
25max
|
PDF
|
MCH6614
Abstract: No abstract text available
Text: Ordering number : ENN6795 MCH6614 N-Channel and P-Channel Silicon MOSFET MCH6614 Ultrahigh-Speed Switching Applications • The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby
|
Original
|
ENN6795
MCH6614
MCH6614
MCH6614]
|
PDF
|
2SJ289
Abstract: No abstract text available
Text: Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. unit : mm 2062A [2SJ289] 4.5 1.6 0.4 1.0 2.5 4.25max
|
Original
|
ENN6609
2SJ289
2SJ289]
25max
2SJ289
|
PDF
|
2SJ609
Abstract: TA-2920
Text: Ordering number : ENN6671 2SJ609 P-Channel Silicon MOSFET 2SJ609 DC / DC Converter Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SJ609] 8.0 3.3 1.4 4.0 1.0 1.0 1.5 7.5 3.0 11.0 • Package Dimensions
|
Original
|
ENN6671
2SJ609
2SJ609]
O-126ML
2SJ609
TA-2920
|
PDF
|
MOSFET 2906
Abstract: TA-2906 MCH6303 N1500
Text: Ordering number : ENN6778 MCH6303 P-Channel Silicon MOSFET MCH6303 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193 [MCH6303] 0.25 • Package Dimensions 0.3 5 2 3 0.65 0.25 1 0.15
|
Original
|
ENN6778
MCH6303
MCH6303]
MOSFET 2906
TA-2906
MCH6303
N1500
|
PDF
|
2SK3449
Abstract: No abstract text available
Text: Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SK3449] 8.0 3.3 1.5 7.5 3.0 11.0 1.4 4.0 1.0
|
Original
|
ENN6672
2SK3449
2SK3449]
O-126ML
2SK3449
|
PDF
|
2sc5696
Abstract: 2SC5696 equivalent TA-3207 2sc5696 transistor using of damper in Horizontal Output Transistor TA-2994
Text: Ordering number : ENN6663A 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).
|
Original
|
ENN6663A
2SC5696
2SC5696]
2sc5696
2SC5696 equivalent
TA-3207
2sc5696 transistor
using of damper in Horizontal Output Transistor
TA-2994
|
PDF
|
SPW 078
Abstract: pst 39 transformer Wabash Transformer spw -136 spw+-079+transformer 4-07-7016 MT12/SPW 078 spw -055 transformer pc-24-450 TRANSFORMER 4-44-5010
Text: WabashTransformer.com ● Class 2, VDE, UL, CSA Recognized ● Zero Defect, 100 % Tested ● Competitive Prices ● Standard & Custom Designs ● 2 Year Warranty Table of Contents Product Description Class 2 CL UL5085-3 Transformer International Power Transformer
|
Original
|
UL5085-3
SPW 078
pst 39 transformer
Wabash Transformer
spw -136
spw+-079+transformer
4-07-7016
MT12/SPW 078
spw -055 transformer
pc-24-450
TRANSFORMER 4-44-5010
|
PDF
|
70306
Abstract: MCH6615 IT0251
Text: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low
|
Original
|
MCH6615
EN6796A
MCH6615
70306
IT0251
|
PDF
|
IT0251
Abstract: ta2909 MCH6614 TA-2909
Text: MCH6614 注文コード No. N 6 7 9 5 A 三洋半導体データシート 半導体ニューズ No.N6795 をさしかえてください。 MCH6614 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
|
Original
|
MCH6614
N6795
900mm2
--200mA
900mm2
IT02517
IT02516
IT02518
IT0251
ta2909
MCH6614
TA-2909
|
PDF
|
2062a
Abstract: 2SJ289 2SJ28 18V00
Text: 注文コード No. N 6 6 0 9 2SJ289 No. N 6 6 0 9 90100 新 2SJ289 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
|
Original
|
2SJ289
250mm2
250mA
250mA,
IT02292
IT02293
IT02289
--10V
2062a
2SJ289
2SJ28
18V00
|
PDF
|
2SC5699
Abstract: rl66
Text: Ordering number : ENN6665A 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).
|
Original
|
ENN6665A
2SC5699
2SC5699]
2SC5699
rl66
|
PDF
|
SVC325
Abstract: IT0251
Text: Ordering number : ENN6649 SVC325 Diffused Junction Type Silicon Diode SVC325 Varactor Diode • • Package Dimensions Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.
|
Original
|
ENN6649
SVC325
SVC325]
SVC325
IT0251
|
PDF
|
|
|
TA-2474
Abstract: FTS1011 S1011 ta2474 A3100
Text: Ordering number : ENN7003 FTS1011 P-Channel Silicon MOSFET FTS1011 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. 2.5V drive. Mounting height 1.1mm. unit : mm 2147A [FTS1011] 3.0 0.65 5 4.5 6.4 0.5 8 0.425 0.95
|
Original
|
ENN7003
FTS1011
FTS1011]
TA-2474
FTS1011
S1011
ta2474
A3100
|
PDF
|
2SK3448
Abstract: N1500 TA-2921
Text: Ordering number : ENN6785 2SK3448 N-Channel Silicon MOSFET 2SK3448 Ultrahigh-Speed Switching Use Features • • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping. unit : mm 2087A [2SK3448] 2.5 1.45 1.0
|
Original
|
ENN6785
2SK3448
2SK3448]
2SK3448
N1500
TA-2921
|
PDF
|
MCH6403
Abstract: TA-2908 N1500
Text: Ordering number : ENN6780 MCH6403 N-Channel Silicon MOSFET MCH6403 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193 [MCH6403] 0.25 • Package Dimensions 0.3 5 2 3 0.65 0.25 1 0.15
|
Original
|
ENN6780
MCH6403
MCH6403]
MCH6403
TA-2908
N1500
|
PDF
|
MCH6626
Abstract: No abstract text available
Text: MCH6626 Ordering number : ENN7918 N-Channel and P-Channel Silicon MOSFETs MCH6626 General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
|
Original
|
MCH6626
ENN7918
MCH6626]
MCH6626
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCH6626 MCH6626 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
|
Original
|
MCH6626
MCH6626]
MCH6626
ENN7918
MCH6626/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCH6615 Ordering number : EN6796A MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.
|
Original
|
MCH6615
EN6796A
MCH6615
|
PDF
|
IT0251
Abstract: No abstract text available
Text: Ordering number : ENN6649 Diffused Junction Type Silicon Diode SVC325 IS M iY O l Varactor Diode Features Package Dimensions • Miniaturization and high-integration o f tuner sets can be easily achieved due to the small package. • High capacitance ratio and high quality factor.
|
OCR Scan
|
ENN6649
SVC325
SVC325]
IT0251
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6795 N-Channel and P-Channel Silicon MOSFET MCH6614 SAÜYO Ultrahigh-Speed Switching Applications Features Package Dimensions • The M CH 6614 incorporates two elements that are an N-channel and a P-channel M O SF E T s that feature low
|
OCR Scan
|
ENN6795
MCH6614
MCH6614]
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number: ENN6787 P-Channel Silicon MOSFET FSS140 Load Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4.0V drive. unit : mm 2116 [FSS140] R H . . H R 1 : Source 2 : Source 3 : Source B 1 T Ï Ï
|
OCR Scan
|
ENN6787
FSS140
FSS140]
|
PDF
|
transistor SM 2174
Abstract: tt2050 ENN6674 IT025
Text: Ordering number : ENN6674 j _ NPN Triple Diffused Planar Silicon Transistor TT2050 IsatlYOl Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed.
|
OCR Scan
|
ENN6674
TT2050
TT2050]
transistor SM 2174
tt2050
IT025
|
PDF
|
