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Catalog Datasheet	MFG & Type	Document Tags	PDF
2SJ612 Abstract: No abstract text available Text: 2SJ612 Ordering number : EN7178B P-Channel Silicon MOSFET 2SJ612 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage	Original	2SJ612 EN7178B PW10s, 250mm20 2SJ612	PDF
rl76 Abstract: ENN7178A 2SJ612 Text: Ordering number : ENN7178A 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ612] 4.5 1.6 0.4 1.0	Original	ENN7178A 2SJ612 2SJ612] 25max rl76 ENN7178A 2SJ612	PDF
RL76 Abstract: No abstract text available Text: Ordering number : ENN7178 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ612] 4.5 1.6 0.4 1.0 2.5	Original	ENN7178 2SJ612 2SJ612] 25max RL76	PDF
2SJ612-TD Abstract: 2SJ612 TA-3522 Text: 2SJ612 注文コード No. N 7 1 7 8 B 三洋半導体データシート半導体データシート No.N7178A をさしかえてください。 2SJ612 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長	Original	2SJ612 N7178A 250mm2 --10V IT04255 250mm2 IT04260 2SJ612-TD 2SJ612 TA-3522	PDF