2SJ615
Abstract: TA-3846
Text: 2SJ615 Ordering number : EN7179B P-Channel Silicon MOSFET 2SJ615 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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2SJ615
EN7179B
PW10s,
250mm20
2SJ615
TA-3846
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TA-3846
Abstract: 2SJ615 TA384
Text: 2SJ615 注文コード No. N 7 1 7 9 B 三洋半導体データシート 半導体データシート No.N7179A をさしかえてください。 2SJ615 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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2SJ615
N7179A
250mm2
IT04264
250mm2
IT04270
IT04271
TA-3846
2SJ615
TA384
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2SJ615
Abstract: No abstract text available
Text: Ordering number : ENN7179A 2SJ615 P-Channel Silicon MOSFET 2SJ615 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ615] 4.5 1.6 0.4 1.0 2.5
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ENN7179A
2SJ615
2SJ615]
25max
2SJ615
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71794
Abstract: 2SJ615
Text: Ordering number : ENN7179 2SJ615 P-Channel Silicon MOSFET 2SJ615 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ615] 4.5 1.6 0.4 1.0 2.5
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Original
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ENN7179
2SJ615
2SJ615]
25max
71794
2SJ615
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PDF
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