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IXBA12N300HV Abstract: IXBT12N300HV Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA12N300HV IXBT12N300HV VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V TO-263 (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000	Original	PDF	IXBA12N300HV IXBT12N300HV IC110 O-263 IC110 O-268 06egrees 12N300 IXBT12N300HV

Catalog Datasheet

MFG & Type

PDF

Document Tags

IXBA12N300HV

Abstract: IXBT12N300HV
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA12N300HV IXBT12N300HV VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V TO-263 (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000

Original

PDF

IXBA12N300HV IXBT12N300HV IC110 O-263 IC110 O-268 06egrees 12N300 IXBT12N300HV