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    IXD_609 Price and Stock

    IXYS Corporation IXDD609SIATR

    Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
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    TTI IXDD609SIATR Reel 4,000 2,000
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    IXYS Corporation IXDN609SI

    Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
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    TTI IXDN609SI Tube 2,300 100
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    IXYS Corporation IXDI609SI

    Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
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    TTI IXDI609SI Tube 1,000 100
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    IXYS Corporation IXDN609CI

    Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
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    TTI IXDN609CI Tube 1,000 50
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    IXYS Corporation IXDD609YI

    Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
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    TTI IXDD609YI Tube 1,000 50
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    IXD_609 Datasheets Context Search

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    IXDN609

    Abstract: IXDD609 IXDD609SIA IXDD609PI ixdn609pi IXDI609PI IXDD609CI IXDD609SI IXDI609 IXDI609YI
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R02 IXDN609 IXDD609 IXDD609SIA IXDD609PI ixdn609pi IXDI609PI IXDD609CI IXDD609SI IXDI609 IXDI609YI PDF

    IXDN609

    Abstract: IXDD609CI IXD609 IXDD609 IXDI609 IXDD609PI IXDN609SI ixdn609s IXDD609SI ixdd609sitr
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R00F IXDN609 IXDD609CI IXD609 IXDD609 IXDI609 IXDD609PI IXDN609SI ixdn609s IXDD609SI ixdd609sitr PDF

    IXDD609D2

    Abstract: IXDD609 IXDN609 609PI IXDD609CI IXDD609PI 609CI IXDN609YI IXD609 IXDI609CI
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R00E IXDD609D2 IXDD609 IXDN609 609PI IXDD609CI IXDD609PI 609CI IXDN609YI IXD609 IXDI609CI PDF

    IXDN609

    Abstract: IXD609 IXDD609D2TR IXDN609YI IXDN609PI
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R00D IXDN609 IXD609 IXDD609D2TR IXDN609YI IXDN609PI PDF

    IXDN609

    Abstract: IXDD609 IXDD609SI IXDD609CI IXDD609D2TR IXDD609PI IXDD609SIA IXDD609SIATR IXDD609SITR IXDI609
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R01 IXDN609 IXDD609 IXDD609SI IXDD609CI IXDD609D2TR IXDD609PI IXDD609SIA IXDD609SIATR IXDD609SITR IXDI609 PDF

    IXD_609

    Abstract: IXDN609 IXDD609PI IXDN609SI IXDI609PI IXDI609
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R05 IXD_609 IXDN609 IXDD609PI IXDN609SI IXDI609PI IXDI609 PDF

    IXD609

    Abstract: IXD_609
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R01 IXD609 IXD_609 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R04 PDF

    IXDD609SI

    Abstract: IXDN609SI IXDN609 IXD609
    Text: IXD_609SI Automotive Grade 9-Ampere, Low-Side, Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • • • • The IXD_609SI is an automotive grade, high-speed gate driver that is qualified according to AEC Q100 standards. The IXD_609SI output can source and sink


    Original     		609SI 609SI-R01 IXDD609SI IXDN609SI IXDN609 IXD609 PDF

    IXD609

    Abstract: IXDN609 IXDI609 IXDD609 IXDN609SI IXDN609PI 12v 10A dc motor mosfet driver IXDD IXD_609 IXDD609PI
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R03 IXD609 IXDN609 IXDI609 IXDD609 IXDN609SI IXDN609PI 12v 10A dc motor mosfet driver IXDD IXD_609 IXDD609PI PDF

    Untitled

    Abstract: No abstract text available
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R01 PDF

    IXDD609

    Abstract: IXDN609 IXD609 IXDN609PI IXDD609PI IXDI609 IXDI609SIA IXDI609YI IXDN609SI IXDI609PI
    Text: IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		IXDD609/IXDI609/IXDN609 609-R000 IXDD609 IXDN609 IXD609 IXDN609PI IXDD609PI IXDI609 IXDI609SIA IXDI609YI IXDN609SI IXDI609PI PDF

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		CH-2555 N1016, IXEP1400 CPC1706 CPC1020N PDF

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3 PDF

    IRFD630

    Abstract: HCPL-322J HCPL322J TO-247AB
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3 IRFD630 HCPL-322J HCPL322J TO-247AB PDF

    ACPL-322J

    Abstract: MIC4452YN
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3 ACPL-322J MIC4452YN PDF

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA20JT12-247 O-247AB GA20JT12 00E-47 26E-28 98E-10 22E-9 50E-3 PDF

    hcpl-322j

    Abstract: hcpl 322j
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 hcpl-322j hcpl 322j PDF

    IGBT DIVER IC

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA16JT17-247 O-247AB GA16JT17 03E-47 719E-28 68E-10 72E-09 00E-03 IGBT DIVER IC PDF