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    IXD_630 Search Results

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    IXD_630 Price and Stock

    IXYS Corporation IXDD630YI

    Gate Drivers 12.5V 5-PIN TO-263 MOSFET DRIVER; 30A
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    TTI IXDD630YI Tube 1,300 50
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    • 100 $6.93
    • 1000 $5.43
    • 10000 $5.43
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    IXYS Corporation IXDN630YI

    Gate Drivers 12.5V 5-PIN TO-263 MOSFET DRIVER; 30A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXDN630YI Tube 500 50
    • 1 -
    • 10 -
    • 100 $5.26
    • 1000 $5.26
    • 10000 $5.26
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    IXYS Corporation IXDD630CI

    Gate Drivers 12.5V 5-PIN TO-220 MOSFET DRIVER; 30A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXDD630CI Tube 250 50
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    • 100 $7
    • 1000 $5.32
    • 10000 $5.32
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    IXYS Corporation IXDN630MYI

    Gate Drivers 9V 5-PIN TO-263 MOSFET DRIVER; 30A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXDN630MYI Tube 250 50
    • 1 -
    • 10 -
    • 100 $6.85
    • 1000 $5.43
    • 10000 $5.43
    Buy Now

    IXYS Corporation IXDD630MCI

    Gate Drivers 9V 5-PIN TO-220 MOSFET DRIVER; 30A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXDD630MCI Tube 250 50
    • 1 -
    • 10 -
    • 100 $7.03
    • 1000 $5.43
    • 10000 $5.43
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    IXD_630 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXDN630

    Abstract: IXDD630YI IXDI630CI IXDN630YI IXDI630 IXDD630 IXDD630MYI IXDD630CI IXDN630CI IXDD630MCI
    Text: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection • Logic Input Withstands Negative Swing of up to 5V


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    30-Ampere IXDD630/IXDI630/IXDN630 630-R01 IXDN630 IXDD630YI IXDI630CI IXDN630YI IXDI630 IXDD630 IXDD630MYI IXDD630CI IXDN630CI IXDD630MCI PDF

    IXDN630

    Abstract: 20/dp 630 ixys
    Text: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection


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    30-Ampere IXDD630/IXDI630/IXDN630 630-R02 IXDN630 20/dp 630 ixys PDF

    IXDD630

    Abstract: IXDN630
    Text: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection • Logic Input Withstands Negative Swing of up to 5V


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    30-Ampere IXDD630/IXDI630/IXDN630 630-R00G IXDD630 IXDN630 PDF

    IXD_630

    Abstract: IXDN630 IXDI630 IXDD630 ixdd630myi IXDD630YI igbt transformer driver IXDD630MCI
    Text: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection


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    30-Ampere IXDD630/IXDI630/IXDN630 630-R03 IXD_630 IXDN630 IXDI630 IXDD630 ixdd630myi IXDD630YI igbt transformer driver IXDD630MCI PDF

    Untitled

    Abstract: No abstract text available
    Text: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection • Logic Input Withstands Negative Swing of up to 5V


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    30-Ampere IXDD630/IXDI630/IXDN630 630-R01 PDF

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


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    CH-2555 N1016, IXEP1400 CPC1706 CPC1020N PDF

    hcpl 322j

    Abstract: hcpl-322j HCPL316
    Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


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    GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 hcpl 322j hcpl-322j HCPL316 PDF

    IRFD630

    Abstract: HCPL-322J HCPL322J TO-247AB
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


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    GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3 IRFD630 HCPL-322J HCPL322J TO-247AB PDF

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


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    CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844 PDF

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


    Original
    N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original
    GA20JT12-247 O-247AB GA20JT12 00E-47 26E-28 98E-10 22E-9 50E-3 PDF

    hcpl-322j

    Abstract: hcpl 322j
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original
    GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 hcpl-322j hcpl 322j PDF