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    IXFK Search Results

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    IXFK Price and Stock

    IXYS Corporation IXFK110N07

    MOSFET N-CH 70V 110A TO264AA
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    DigiKey IXFK110N07 Tube 1,250 1
    • 1 $21.48
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    Quest Components IXFK110N07 2
    • 1 $17.2395
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    Littelfuse Inc IXFK88N30P

    MOSFET N-CH 300V 88A TO264AA
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    DigiKey IXFK88N30P Tube 596 1
    • 1 $14.65
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    Littelfuse Inc IXFK150N30X3

    MOSFET N-CH 300V 150A TO264
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    DigiKey IXFK150N30X3 Tube 595 1
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    Newark IXFK150N30X3 Bulk 225 1
    • 1 $15.58
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    Littelfuse Inc IXFK140N20P

    MOSFET N-CH 200V 140A TO264AA
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    DigiKey IXFK140N20P Tube 500 1
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    RS IXFK140N20P Bulk 8 Weeks 25
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    Littelfuse Inc IXFK80N65X2

    MOSFET N-CH 650V 80A TO264
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    DigiKey IXFK80N65X2 Tube 491 1
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    RS IXFK80N65X2 Bulk 8 Weeks 25
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    IXFK Datasheets (162)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK100N10 IXYS 100V HiPerFET power MOSFET Original PDF
    IXFK100N25 IXYS 250V HiPerFET power MOSFET Original PDF
    IXFK100N65X2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 100A TO-264 Original PDF
    IXFK102N30P IXYS PolarHT HiPerFET Power MOSFET Original PDF
    IXFK102N30P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 102A TO-264 Original PDF
    IXFK105N07 IXYS 70V HiPerFET power MOSFET Original PDF
    IXFK110N06 IXYS 60V HiPerFET power MOSFET Original PDF
    IXFK110N07 IXYS 70V HiPerFET power MOSFET Original PDF
    IXFK120N20 IXYS 200V HiPerFET power MOSFET Original PDF
    IXFK120N20 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 120A TO-264AA Original PDF
    IXFK120N20P IXYS PolarHT HiPerFET Power MOSFET Original PDF
    IXFK120N25 IXYS 250V HiPerFET power MOSFET Original PDF
    IXFK120N25P IXYS PolarHT HiPerFET Power MOSFET Original PDF
    IXFK120N30P3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 120A TO-264 Original PDF
    IXFK120N30T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 120A 300V TO-264 Original PDF
    IXFK120N65X2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 120A TO-264 Original PDF
    IXFK140N20P IXYS PolarHT HiPerFET Power MOSFET Original PDF
    IXFK140N25T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 140A TO264 Original PDF
    IXFK140N30P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 140A TO-264 Original PDF
    IXFK150N10 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    ...

    IXFK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    34N80

    Abstract: IXFN34N80 ixfx34n80
    Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original
    PDF 34N80 247TM 34N80 IXFN34N80 ixfx34n80

    73N30

    Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30
    Text: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK


    Original
    PDF O-264 73N30 "SOT-227 B" dimensions SOT-227 Package ixfk73n30

    62n25

    Abstract: 62n25 mosfet 62n2 247TM
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient


    Original
    PDF 62N25 247TM O-264 728B1 62n25 62n25 mosfet 62n2 247TM

    IRM-38

    Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


    Original
    PDF O-264 90N20 100N20 106N20 IXFN90N20 IXFN106N20 IRM-38 106N20 IXFK90N20 IXFN100N20 IXFN106N20

    120N25

    Abstract: ID104
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 120N25 ID104 247TM 728B1 120N25 ID104

    100N25

    Abstract: ID104
    Text: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM


    Original
    PDF 100N25 ID104 247TM capa26 100N25 ID104

    52N30

    Abstract: IXFH 52N30q 52N30Q TO264 footprint
    Text: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions


    Original
    PDF 52N30Q 52N30 IXFH 52N30q 52N30Q TO264 footprint

    32N50Q

    Abstract: 125OC
    Text: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A


    Original
    PDF 32N50Q 247TM 125OC 728B1 123B1 728B1 065B1 32N50Q 125OC

    36N60

    Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
    Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)


    Original
    PDF 32N60 36N60 36N60 32N60 250ns O-264 IXFN SOT227 fast diode SOT-227 D-68623

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class = 150 V = 80 A = 22.5 mW £ 200 ns RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS


    Original
    PDF 80N15Q

    Untitled

    Abstract: No abstract text available
    Text: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)


    Original
    PDF 21N100F 247TM 728B1

    E 150N10

    Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
    Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original
    PDF IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10

    IXFK240N15T2

    Abstract: IXFX240N15T2 PLUS247
    Text: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original
    PDF IXFK240N15T2 IXFX240N15T2 140ns O-264 240N15T2 IXFK240N15T2 IXFX240N15T2 PLUS247

    80N50P

    Abstract: IXFK 80N50P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original
    PDF 80N50P O-264 80N50P IXFK 80N50P PLUS247

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS on t rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 36 A ≤ 190 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol


    Original
    PDF 36N60P

    88N30P

    Abstract: A220D 88N30
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr = 300 V = 88 A Ω = 40 mΩ ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300


    Original
    PDF 88N30P O-247 88N30P A220D 88N30

    200N10P

    Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
    Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original
    PDF 200N10P OT-227 E153432 IXFX200N10P IXFN200N10P 200N10P IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS

    360N10T

    Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
    Text: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original
    PDF IXFK360N10T IXFX360N10T 130ns O-264 360N10T PLUS-247 IXFK360N10T IXFX360N10T PLUS247

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient


    Original
    PDF 90N30 90N30 ID104 247TM O-264

    Siemens DIODE E 1240

    Abstract: IXFK80N60P3 IXFX80N60P3
    Text: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V


    Original
    PDF IXFK80N60P3 IXFX80N60P3 O-264 250ns PLUS247 80N60P3 Siemens DIODE E 1240 IXFX80N60P3

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 24N100 IXFX 24N100 VDSS ID25 RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000


    Original
    PDF 24N100 24N100 247TM O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 120N20 120N20 ID104 247TM O-264 125OC 728B1

    TO-264-aa

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30


    OCR Scan
    PDF IXFK90N20Q IXFK90N20QS O-264 O-264AA TO-264-aa

    RM338

    Abstract: qfl 289 106N20 IXFK90N20
    Text: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2


    OCR Scan
    PDF IXFK90N20 IXFN106N20 90N20 106N20 200ns 20mi2 200ns d68623 106N20 RM338 qfl 289