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IXYS Corporation IXFN25N90 MOSFET N-CH 900V 25A SOT-227B
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DigiKey	IXFN25N90	Tube			10	1 - 10 $20.968 100 $20.968 1000 $20.968 10000 $20.968	Buy Now
Mouser Electronics	IXFN25N90					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Integrated Circuits Division IXFN25N90 MOSFET MOD.25A 900V N-CH SOT227B HIPERFET CHASSIS
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Ozdisan Elektronik	IXFN25N90					1 $12.25867 10 $11.4567 100 $11.4567 1000 $11.4567 10000 $11.4567	Get Quote

IXFN25N90 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFN25N90		IXYS	900V HiPerFET power MOSFET, single die MOSFET		Original	PDF

IXFN25N90 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXFN26N90 Abstract: 25N90 26N90 IXFN25N90 IXYS MOSFET 900V 13A Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN25N90 IXFN26N90 VDSS ID25 RDS on 900V 25A 900V 26A 330mΩ Ω 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings	Original	IXFN25N90 IXFN26N90 OT-227 E153432 25N90 26N90 IXFN26N90 25N90 26N90 IXFN25N90 IXYS MOSFET 900V 13A	PDF
26N90 Abstract: IXFN26N90 125OC 25N90 IXFN25N90 max1828 Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions	Original	26N90 25N90 OT-227 E153432 26N90 IXFN26N90 125OC 25N90 IXFN25N90 max1828	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
IXAN0009 Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power	Original	IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w	PDF
IXFX25N90 Abstract: IXFX26N90 Text: HiPerFETTM Power MOSFETs IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 VDSS ID25 RDS on 900V 25A 330mΩ Ω 900V 26A 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 O-264 25N90 26N90 PLUS247 IXFX25N90 IXFX26N90	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions	Original	26N90 25N90 25N90 Figure10. IXFN26N90	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF