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IXFN30N120P Price and Stock

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Littelfuse Inc IXFN30N120P MOSFET N-CH 1200V 30A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN30N120P	Tube			300	1 - 10 - 100 - 1000 $47.34727 10000 $47.34727	Buy Now
Newark	IXFN30N120P	Bulk			300	1 - 10 - 100 $49.62 1000 $49.62 10000 $49.62	Buy Now
RS	IXFN30N120P	Bulk		8 Weeks	10	1 - 10 $73.23 100 $73.23 1000 $73.23 10000 $73.23	Get Quote
IXYS Corporation IXFN30N120P Discrete Semiconductor Modules 30 Amps 1200V 0.35 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN30N120P					1 - 10 - 100 - 1000 $50.01 10000 $50.01	Get Quote
Future Electronics	IXFN30N120P	Tube		26 Weeks	10	1 - 10 $55.49 100 $55.49 1000 $55.49 10000 $55.49	Buy Now
TTI	IXFN30N120P	Tube			300	1 - 10 - 100 - 1000 $47.38 10000 $47.38	Buy Now
TME	IXFN30N120P				1	1 $72.36 10 $57.45 100 $57.45 1000 $57.45 10000 $57.45	Get Quote
New Advantage Corporation	IXFN30N120P		24		1	1 - 10 $115.77 100 $108.05 1000 $108.05 10000 $108.05	Buy Now

IXFN30N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFN30N120P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 30A SOT-227B		Original	PDF

IXFN30N120P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXFN30N120P Abstract: diode 1200v 30A 30N120P Text: IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C IXFN30N120P diode 1200v 30A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	IXFN30N120P 300ns OT-227 E153432 30N120P 1-07-A	PDF
Untitled Abstract: No abstract text available Text: VDSS ID25 IXFN30N120P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF