Untitled
Abstract: No abstract text available
Text: HiperFETTM Power MOSFETs Q-Class VDSS ID25 IXFA4N100Q IXFP4N100Q RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1000V = 4A ≤ 3.0Ω Ω TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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IXFA4N100Q
IXFP4N100Q
O-263
125OC
4N100Q
4-01-11-A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS on ≤ 3.0Ω IXFP4N100QM N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol Test Conditions OVERMOLDED (IXFP.M) OUTLINE
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IXFP4N100QM
4N100Q
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4N100Q
Abstract: No abstract text available
Text: Advance Technical Information IXFP4N100QM HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS on ≤ 3.0Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFP4N100QM
4N100Q
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4N100Q
Abstract: No abstract text available
Text: Advance Technical Information IXFP4N100QM HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS on ≤ 3.0Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP.M) OUTLINE Symbol Test Conditions
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IXFP4N100QM
O-220
4N100Q
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IXFA4N100Q
Abstract: IXFP4N100Q 4N100Q
Text: IXFA4N100Q IXFP4N100Q HiperFETTM Power MOSFETs Q-Class VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1000V = 4A ≤ 3.0Ω Ω TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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IXFA4N100Q
IXFP4N100Q
O-263
O-220AB
125OC
4N100Q
4-01-11-A
IXFP4N100Q
4N100Q
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mosfet 600V 10A logic level
Abstract: IXFP4N100Q IXDD414 IX2R11P7 High Side dsei12 DSEI12-10A IX2R11 IX2R11S3 IXDD
Text: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX2R11
IX2R11
HCPL-314J
DSEI12-10A
IXDD414
IXFP4N100Q
-600V
IX2R11S3
mosfet 600V 10A logic level
IXFP4N100Q
IXDD414
IX2R11P7
High Side
dsei12
DSEI12-10A
IXDD
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IXFH32N50Q equivalent
Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω
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IXFD50N20-7X
IXFD50N20Q-7X
IXFD80N20Q-8X
IXFD90N20Q-8Y
IXFD120N20-9X
IXFD180N20-9Y
IXFD60N25Q-8X
IXFD100N25-9X
IXFD40N30-7X
IXFD40N30Q-7X
IXFH32N50Q equivalent
ixfk24n100
IXFN80N50
1672 mos-fet
IXFH40N30
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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IXCP10M90S
Abstract: IX2R11P7 10M90s IXTH14N60P 78L15 DSEI12-10A IX2R11 IX2R11S3 IXDD414 IXCP
Text: IX2R11 IX2R11 500 Volt, 2 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap power supply along with a Low Side Driver. • Fully operational to 500V • ± 50V/ns dV/dt immunity
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IX2R11
IX2R11
IX2R11S3
IX2R11P7
Edisonstrasse15
D-68623;
IXCP10M90S
10M90s
IXTH14N60P
78L15
DSEI12-10A
IXDD414
IXCP
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IX6R11P7
Abstract: No abstract text available
Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity
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IX6R11
IX6R11
IX6R11S6
IX6R11S3
IX6R11P7
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Untitled
Abstract: No abstract text available
Text: IX4R11 Preliminary Data Sheet 4A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX4R11
IX4R11
HCPL-314J
DSEI12-10A
IXDD414
IXFP4N100Q
-600V
IX4R11S3
IX4R11P7
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Untitled
Abstract: No abstract text available
Text: IX4R11 Preliminary Data Sheet 4A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX4R11
IX4R11
HCPL-314J
DSEI12-10A
IXDD414
IXFP4N100Q
-600V
IX4R11S3
IX4R11P7
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VCH20
Abstract: IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S3 IX6R11S6 ixys mosfet
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
IXFH14N100Q
IXTU01N100
IX6R11S3
IX6R11S6
IX6R11S3
IX6R11S6
VCH20
IX6R11P7
ixdd414
IXFK21N100F
18PIN
18-PIN
ixys mosfet
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IXCP10M90S
Abstract: IX6R11S6 18-PIN 10m90s
Text: IX6Q11 1 MHz, 300 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 300V* • ± 50V/ns dV/dt immunity
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IX6Q11
IX6Q11
IXTU01N100
IX6Q11S3
IX6Q11S6
IXCP10M90S
IX6R11S6
18-PIN
10m90s
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IX6R11P7
Abstract: No abstract text available
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
sigTU01N100
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
IX6R11P7
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HV MOSFET
Abstract: No abstract text available
Text: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX2R11
IX2R11
100uF/250V
50v/ns
IXDD414
-600V
IXFP4N100Q
DSEI12-10A
HCPL-314J
HV MOSFET
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DSEI12-10A
Abstract: hcpl 314j igbt High Current Low Side Driver ST VCH20
Text: IXA611 Preliminary Data Sheet 600mA Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V
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IXA611
600mA
IXA611
100uF/250V
50v/ns
IXDD414
-600V
IXFP4N100Q
DSEI12-10A
HCPL-314J
DSEI12-10A
hcpl 314j igbt
High Current Low Side Driver ST
VCH20
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10M90S
Abstract: IXTH14N60P IX6R11 IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A
Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity
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IX6R11
IX6R11
IX6R11S6
IX6R11S3
10M90S
IXTH14N60P
IX6R11S3
IX6R11P7
IXFH14N100Q
IXCP
10M90
DSEI12-10A
igbt 500V 22A
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mosfet 600V 10A logic level
Abstract: 314j DSEI12-10A IX4R11 IX4R11P7 IX4R11S3 IXDD414 High Current Low Side Driver ST
Text: IX4R11 Preliminary Data Sheet 4A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX4R11
IX4R11
HCPL-314J
DSEI12-10A
IXDD414
IXFP4N100Q
-600V
IX4R11S3
mosfet 600V 10A logic level
314j
DSEI12-10A
IX4R11P7
IXDD414
High Current Low Side Driver ST
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ne 22 mosfet
Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)
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OCR Scan
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PDF
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ISOPLUS220TM
ISOPLUS247TMV
T0268
T0264
OT227B
O-263
O-220
247TM
O-247
O-204
ne 22 mosfet
IXFH26N60Q
IXFT12N100Q
IXFR100N25
IXFN26N90
FN230
IXFN36N60
N50P
IXFN44N50U2
IXFN80N50
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