Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFR32N100 Search Results

    SF Impression Pixel

    IXFR32N100 Price and Stock

    Select Manufacturer

    Littelfuse Inc IXFR32N100Q3

    MOSFET N-CH 1000V 23A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR32N100Q3 Tube 30 1
    • 1 $43.21
    • 10 $43.21
    • 100 $29.778
    • 1000 $29.778
    • 10000 $29.778
    		Buy Now
    Newark IXFR32N100Q3 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $31.21
    • 10000 $31.21
    		Buy Now
    RS IXFR32N100Q3 Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $46.06
    • 1000 $46.06
    • 10000 $46.06
    		Get Quote

    Littelfuse Inc IXFR32N100P

    MOSFET N-CH 1000V 18A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR32N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $15.72663
    • 10000 $15.72663
    		Buy Now
    Newark IXFR32N100P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $16.49
    • 10000 $16.49
    		Buy Now
    RS IXFR32N100P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $24.32
    • 1000 $24.32
    • 10000 $24.32
    		Get Quote

    IXYS Corporation IXFR32N100P

    MOSFETs 32 Amps 1000V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFR32N100P
    • 1 -
    • 10 -
    • 100 -
    • 1000 $16.95
    • 10000 $16.95
    		Get Quote
    TTI IXFR32N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $15.57
    • 10000 $15.57
    		Buy Now
    TME IXFR32N100P 12 1
    • 1 $26.26
    • 10 $20.83
    • 100 $18.88
    • 1000 $18.88
    • 10000 $18.88
    		Buy Now

    IXYS Corporation IXFR32N100Q3

    MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/23A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFR32N100Q3
    • 1 -
    • 10 -
    • 100 -
    • 1000 $29.78
    • 10000 $29.78
    		Get Quote
    Bristol Electronics IXFR32N100Q3 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components IXFR32N100Q3 24
    • 1 $27.816
    • 10 $26.4252
    • 100 $25.0344
    • 1000 $25.0344
    • 10000 $25.0344
    		Buy Now
    TTI IXFR32N100Q3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $29.78
    • 10000 $29.78
    		Buy Now
    TME IXFR32N100Q3 30 1
    • 1 $49.55
    • 10 $39.4
    • 100 $35.39
    • 1000 $35.39
    • 10000 $35.39
    		Buy Now

    IXFR32N100 Datasheets (2)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    IXFR32N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 18A ISOPLUS247 Original PDF
    IXFR32N100Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 23A ISOPLUS247 Original PDF

    IXFR32N100 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR32N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR32N100P 32N100P 8-24-07-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR32N100Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 23A Ω 350mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		IXFR32N100Q3 300ns ISOPLUS247 E153432 32N100Q3 0-11-A PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR32N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Maximum Ratings = 1000V = 18A ≤ 340mΩ Ω ≤ 300ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR32N100P 300ns Dire12 32N100P 3-28-08-C PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR32N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 23A Ω 350mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		IXFR32N100Q3 300ns ISOPLUS247 E153432 32N100Q3 0-11-A PDF

    IXFR32N100P

    Abstract: 32N100P ISOPLUS247 IXFR32N100
    Text: PolarTM Power MOSFET HiPerFETTM IXFR32N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Maximum Ratings = 1000V = 18A ≤ 340mΩ Ω ≤ 300ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR32N100P 300ns 32N100P 3-28-08-C IXFR32N100P ISOPLUS247 IXFR32N100 PDF

    IXFR32N100Q3

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFR32N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 23A Ω 350mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		IXFR32N100Q3 300ns ISOPLUS247 E153432 32N100Q3 Q8-R44) IXFR32N100Q3 PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF