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IXGA16N60C2 Price and Stock

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IXYS Corporation IXGA16N60C2D1 IGBT 600V 40A 150W TO263
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IXGA16N60C2 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGA16N60C2		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 150W TO263		Original	PDF
IXGA16N60C2		IXYS	TRANS IGBT CHIP N-CH 600V 40A 3TO-263		Original	PDF
IXGA16N60C2D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 150W TO263		Original	PDF
IXGA16N60C2D1		IXYS	TRANS IGBT CHIP N-CH 600V 40A 3TO-263		Original	PDF
IXGA16N60C2D1SN		IXYS	TRANS IGBT CHIP N-CH 600V 40A 3TO-263		Original	PDF
IXGA16N60C2SN		IXYS	TRANS IGBT CHIP N-CH 600V 40A 3TO-263		Original	PDF

IXGA16N60C2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
16N60C3 Abstract: No abstract text available Text: HiPerFASTTM IGBTs C2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2 IXGP16N60C2 600V 16A 3.0V 33ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES	Original	IC110 IXGA16N60C2 IXGP16N60C2 O-263 O-220) 16N60C3D1 16N60C3	PDF
IXGA16N60C2 Abstract: IXGP16N60C2 Text: Preliminary Technical Information VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2 IXGP16N60C2 HiPerFASTTM IGBTs C2-Class High Speed 600V 16A 3.0V 35ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGA16N60C2 IXGP16N60C2 O-263 338B2 IXGA16N60C2 IXGP16N60C2	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBTs C2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 600V 16A 3.0V 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 O-263 IF110 16N60C3D1	PDF
IXGH16N60C2D1 Abstract: IXGP16N60C2D1 16N60C3 IF110 IXGA16N60C2D1 Text: HiPerFASTTM IGBTs C2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 600V 16A 3.0V 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 O-263 IF110 16N60C3D1 IXGH16N60C2D1 IXGP16N60C2D1 16N60C3 IF110 IXGA16N60C2D1	PDF
IF110 Abstract: IXGA16N60C2D1 IXGH16N60C2D1 IXGP16N60C2D1 Text: Preliminary Technical Information VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 HiPerFASTTM IGBTs C2-Class High Speed w/ Diode 600V 16A 3.0V 35ns TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	IC110 IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 O-263 IF110 O-220 O-247 IF110 IXGA16N60C2D1 IXGH16N60C2D1 IXGP16N60C2D1	PDF
IXGA16N60C2 Abstract: IXGP16N60C2 16N60C3 Text: HiPerFASTTM IGBTs C2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2 IXGP16N60C2 600V 16A 3.0V 33ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES	Original	IC110 IXGA16N60C2 IXGP16N60C2 O-263 O-220) O-263 16N60C3D1 IXGA16N60C2 IXGP16N60C2 16N60C3	PDF