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    IXYS Corporation IXGP24N60C

    IGBT 600V 48A TO-220-3
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    IXGP24N60C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGP24N60C IXYS IGBT Discretes Original PDF
    IXGP24N60C4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO220 Original PDF
    IXGP24N60C4D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO220 Original PDF

    IXGP24N60C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High-Gain IGBTs VCES IC110 VCE sat tfi(typ) IXGP24N60C4 IXGH24N60C4 High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGP24N60C4 IXGH24N60C4 O-220AB 338B2 PDF

    IXGP24N60C4D1

    Abstract: IC110
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGP24N60C4D1 IC110 O-220 IF110 338B2 IXGP24N60C4D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGP24N60C4 IXGH24N60C4 IC110 O-220AB O-247 338B2 PDF

    IC110

    Abstract: IXGH24N60C4 IXGP24N60C4
    Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGP24N60C4 IXGH24N60C4 IC110 O-220AB 338B2 IC110 IXGH24N60C4 IXGP24N60C4 PDF

    IXGP24N60C4D1

    Abstract: IF110 IXGP24N60C ups 017
    Text: Advance Technical Information High-Gain IGBT w/ Diode IXGP24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGP24N60C4D1 IC110 O-220 IF110 338B2 IXGP24N60C4D1 IF110 IXGP24N60C ups 017 PDF

    IXGH24N60C4

    Abstract: IXGP24N60C4
    Text: Advance Technical Information IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 IC110 O-263 O-220 338B2 IXGH24N60C4 IXGP24N60C4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGP24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGP24N60C4D1 O-220 IF110 11ective 338B2 PDF