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IXYS Corporation IXGX120N60B IGBT 600V 200A 660W TO247
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DigiKey	IXGX120N60B	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGX120N60B3 IGBT 600V 280A 780W PLUS247
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DigiKey	IXGX120N60B3	Tube			30	1 - 10 - 100 $8.76033 1000 $8.76033 10000 $8.76033	Buy Now
Bristol Electronics	IXGX120N60B3		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXGX120N60B3 Disc Igbt Pt-Mid Frequency To-247Ad/Tube \|Littelfuse IXGX120N60B3
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Newark	IXGX120N60B3	Bulk			30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

IXGX120N60B Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGX120N60B		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 200A 660W TO247		Original	PDF
IXGX120N60B		IXYS	600V HiPerFAST IGBT		Original	PDF
IXGX120N60B3		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 280A 780W PLUS247		Original	PDF

IXGX120N60B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBTs VCES = 600V IC90 = 120A VCE sat ≤ 2.1V IXGK120N60B IXGX120N60B TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	IXGK120N60B IXGX120N60B O-264 120N60B	PDF
ixgx120n60b3 Abstract: 120n60 120N60B3 GenX3TM IXGX120N60B PLUS247 IXGK120N60B3 Text: IXGK120N60B3 IXGX120N60B3 GenX3TM 600V IGBTs VCES IC110 VCE sat tfi(typ) Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching = = ≤£ = 600V 120A 1.8V 145ns TO-264 (IXGK) Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGK120N60B3 IXGX120N60B3 IC110 5-40kHz 145ns O-264 120N60B3 9-10-A ixgx120n60b3 120n60 GenX3TM IXGX120N60B PLUS247 IXGK120N60B3	PDF
120n60b3 Abstract: IXGX120N60B3 PLUS247 IXGK120N60B3 120N60 Text: Preliminary Technical Information IXGK120N60B3 IXGX120N60B3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs for 5-40kHz switching = = ≤£ = 600V 120A 1.8V 145ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	IXGK120N60B3 IXGX120N60B3 IC110 5-40kHz 145ns O-264 120N60B3 IXGX120N60B3 PLUS247 IXGK120N60B3 120N60	PDF
IXGX120N60B Abstract: 120n60 IXGK120N60B PLUS247 Text: IXGK120N60B IXGX120N60B HiPerFASTTM IGBTs VCES = 600V IC90 = 120A VCE sat ≤ 2.1V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C E Tab VGES Continuous ±20 V VGEM Transient	Original	IXGK120N60B IXGX120N60B O-264 120N60B IXGX120N60B 120n60 IXGK120N60B PLUS247	PDF
Untitled Abstract: No abstract text available Text: VCES IC110 VCE sat tfi(typ) IXGK120N60B3 IXGX120N60B3 GenX3TM 600V IGBTs Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching = = ≤£ = 600V 120A 1.8V 145ns TO-264 (IXGK) Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGK120N60B3 IXGX120N60B3 5-40kHz 145ns O-264 120N60B3 9-10-A	PDF
Inverter Welder Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM	Original	PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF
si6045 Abstract: No abstract text available Text: BHXYS Advanced Technical Information Hi PerFAST IGBT IXGK 120N60B IXGX 120N60B V CES ^C25 V CE sat Symbol Test Conditions Maximum Ratings T j = 25° C to 150° C T,J = 25° C to 150° C; FL. = 1 MQ üb 600 600 V V Continuous Transient +20 ±30 V V L.	OCR Scan	120N60B 120N60B PLUS247TM O-264 B2-167 si6045	PDF
Ixgr50n60 Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)	OCR Scan	O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C	PDF