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    IXGX32N170AH1 Price and Stock

    IXYS Corporation IXGX32N170AH1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics IXGX32N170AH1 Tube 27 Weeks 30
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    IXGX32N170AH1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGX32N170AH1 IXYS Very High Voltage IGBT Original PDF

    IXGX32N170AH1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXGX32N170AH1

    Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original
    32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247 PDF