Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTH150N17T Search Results

    SF Impression Pixel

    IXTH150N17T Price and Stock

    IXYS Corporation IXTH150N17T

    MOSFET N-CH 175V 150A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH150N17T Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXTH150N17T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH150N17T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 175V 150A TO-247 Original PDF

    IXTH150N17T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TrenchHVTM Power MOSFET VDSS ID25 IXTH150N17T = 175V = 150A Ω ≤ 12mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 175 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 175 V VGSM Transient


    Original
    IXTH150N17T O-247 150N17T 2-02-08-A PDF

    IXTH150N17T

    Abstract: 150N17T n-channel, 85v, 75a
    Text: Preliminary Technical Information IXTH150N17T Power MOSFET TrenchHVTM VDSS ID25 = 175V = 150A Ω ≤ 12mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original
    IXTH150N17T O-247 150N17T IXTH150N17T n-channel, 85v, 75a PDF

    150N17T

    Abstract: ixth150n17t IXTH150N17 n-channel, 85v, 75a
    Text: IXTH150N17T TrenchHVTM Power MOSFET VDSS ID25 = 175V = 150A Ω ≤ 12mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 175 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 175 V VGSM Transient


    Original
    IXTH150N17T O-247 150N17T 2-02-08-A ixth150n17t IXTH150N17 n-channel, 85v, 75a PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original
    D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF