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    IXTP05N100P Search Results

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    IXTP05N100P Price and Stock

    IXYS Corporation IXTP05N100P

    MOSFET N-CH 1000V 500MA TO220AB
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    DigiKey IXTP05N100P Tube 50
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    TME IXTP05N100P 1
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    IXTP05N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP05N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 500MA TO-263 Original PDF

    IXTP05N100P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET VDSS ID25 IXTA05N100P IXTP05N100P RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXTA05N100P IXTP05N100P O-263 05N100P PDF

    IXTP05N100P

    Abstract: 05n10
    Text: Advance Technical Information IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-220AB Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTP05N100P O-220AB 05N100P IXTP05N100P 05n10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTA05N100P IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXTA05N100P IXTP05N100P O-263 O-220AB 05N100P PDF