2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond
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IXFR48N60P
18N60P
30N60P
22N60P
36N60P
26N60P
48N60P
PLUS220
IXTV22N50PS.
2n60p
gsm based speed control of single phase induction motor
thyristor family
48N60
600v 20 amp mosfet
14n60
300V HiPerFET power MOSFET single die MOSFET
Wireless A.C motor speed controlling system
IXYS SCR MODULE Gate Drive
15N60P
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48N50
Abstract: TAB 429 H 44n50 ixys ixfk 44n50 ixys 44n50 SMD-264 931 diode smd D-68623 IXFK48N50 smd diode 513
Text: IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 VDSS ID25 RDS on IXFK/FN 44N50 500 V 44 A 0.12 Ω IXFK/FN 48N50 500 V 48 A 0.10 Ω TM HiPerFET Power MOSFET N-Channel Enhancement Mode TO-264 Packages Avalanche Rated, High dv/dt, Low trr (trr ≤ 250) ns
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44N50/50S
48N50/50S
44N50
48N50
44N50
48N50
O-264
SMD-264
TAB 429 H
ixys ixfk 44n50
ixys 44n50
SMD-264
931 diode smd
D-68623
IXFK48N50
smd diode 513
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Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω ≤ 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM
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44N50P
03-21-06-B
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44N50
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions
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ISOPLUS247TM
44N50P
405B2
44N50
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44N50P
Abstract: ISOPLUS247
Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS
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44N50P
ISOPLUS247TM
03-21-06-B
44N50P
ISOPLUS247
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44N50
Abstract: 44N50P IXTQ
Text: PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A ≤ 140 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM
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44N50P
03-21-06-B
44N50
44N50P
IXTQ
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P = 500 V = 44 A Ω ≤ 140 mΩ ≤ 200 ns VDSS ID25 RDS on trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS
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44N50P
O-247
O-264
IXFH44N50P
03-21-06-B
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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44N50P
405B2
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44N50P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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44N50P
405B2
44N50P
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123B16
Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q
Text: HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM
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44N50Q
48N50Q
44N50
48N50
OT-227
E153432
728B1
123B1
123B16
44N50
48N50
48N50Q
IXFN48N50Q
IXFN 48n50q
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IXFH44N50P
Abstract: 44n50p ixfh 44n50p C4455 IXFK44N50P
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P RDS on trr Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 500 500 V V VGSM VGSM
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44N50P
O-247
IXFH44N50P
03-21-06-B
44n50p
ixfh 44n50p
C4455
IXFK44N50P
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS
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44N50P
ISOPLUS247TM
03-21-06-B
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions
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ISOPLUS247TM,
44N50Q
48N50Q
728B1
123B1
728B1
065B1
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr ≤ 250 ns Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50
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44N50Q
48N50Q
44N50
48N50
OT-227
E153432
728B1
123B1
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PDF
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IXFR44N50Q
Abstract: IXFR48N50Q 48N50Q ixfr48n5
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings
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ISOPLUS247TM,
44N50Q
48N50Q
728B1
123B1
728B1
065B1
IXFR44N50Q
IXFR48N50Q
48N50Q
ixfr48n5
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44n50
Abstract: 44N50P IXFH44N50P
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 44N50P IXFT 44N50P IXFK 44N50P VDSS ID25 RDS on trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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44N50P
405B2
IXFH44N50P
44n50
44N50P
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44N50
Abstract: 48N50 48N50Q ixys ixfk 44n50
Text: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)
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48N50Q
44N50Q
247TM
44N50
48N50
ixys ixfk 44n50
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet
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ISOPLUS247TM,
44N50Q
48N50Q
48N50Q
IXFR44N50Q:
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C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268
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67N10
75N10
75N10Q
80N10Q
O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
C1218
C1222
ixfh 60N60
IXFX 44N80
C1138
C1238
20n80
C1228
C1172
IXFN 230N10 230N10
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44N50
Abstract: No abstract text available
Text: □ IXYS PRELIMINARY SPECIFICATION HiPerFET Power MOSFETs D V DSS IXFN44N50U2 IXFN48N50U2 IXFN44N50U3 500 V IXFN48N50U3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits cont 44 A 48 A DS(on) % 0.12 Q 35 ns 0.10 Q 35 ns ft* 1 S ym bol
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OCR Scan
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IXFN44N50U2
IXFN48N50U2
IXFN44N50U3
IXFN48N50U3
OT-227
44N50
48N50
IXFN44N5QU2
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS P R E L IM IN A R Y S P E C IF IC A T IO N v HiPerFET Power MOSFETs 500 V 500 V IXFN44N50U2 IXFN48N50U2 K D DSS DS on (cont) 44 A 48 A 0.12 0.10 a Q. 35 ns 35 ns Buck & Boost Configurations for PFC & Motor Control Circuits 1 S ym bo l T e s t C o n d itio n s
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OCR Scan
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IXFN44N50U2
IXFN48N50U2
44N50
48N50
IXFN44N50U3
IXFN48N50U3
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PDF
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ixys ixfk 44n50
Abstract: DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 48N50 SMD-264
Text: nixYS IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 D ^D S S ^D25 DS on IXFK/FN 44N50 500 V 44 A 0.12 Q. IXFK/FN 48N50 500 V 48 A 0.10 a HiPerFET Power MOSFET N-Channel Enhancement Mode T O -2 6 4 P a c k a g e s Avalanche Rated, High dv/dt, Low t (t < 250) ns
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OCR Scan
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44N50/50S
48N50/50S
44N50
48N50
48N50
ixys ixfk 44n50
DIODE SMD V05
1J04
5L46
IXFN48N50
IXfk 75 N 50
SMD-264
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48n50u2
Abstract: 44N50U2 IXFN44N50U2 44N50U
Text: m xY S HiPerFET Power MOSFETs VDSS IXFN 44N50U2 /U3 IX FN 48N50U2/U3 p cont DS(on) 500 V 44 A 0.12 Q 35 ns 500 V 48 A 0.10 a 35 ns Buck & Boost Configurations for PFC & Motor Control Circuits U2 U3 I k Preliminary data Lm lu % o s Is u. « : CL X IA Symbol
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OCR Scan
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44N50U2
48N50U2/U3
44N50
48N50
48N50
OT-227
E153432
IXFN48N50U2
48n50u2
IXFN44N50U2
44N50U
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ot 409
Abstract: SMD-264 K44N50
Text: nixYS ix f k / ix f n 44N50 IXFK/IXFN 48N50 trr Symbol Test Conditions v DSS Tj = 25°Cto150°C 500 500 V VDGR T,J = 2 5°C to 150°C; RG „S= 1 Mi2 500 500 V VGS vGSM Continuous d20 ±20 V Transient ±30 ±30 V ^D25 Tc =25°C 44N50 48N50 44 48 44 48 A A
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OCR Scan
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44N50
48N50
48N50
Cto150
OT-227
E153432
ot 409
SMD-264
K44N50
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PDF
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