IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
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D-68623
IXBOD1-08
IXBOD1-09
IXBOD1-10
DSEP30-06BR
DSEP30-12CR
IXGP70N33
IXGQ90N33
SK0604
IXTP76N075
IXER35N120D1
IXGP70N33TBM-A
DH60-18A
VBO19
SK0712
IXTH1N250
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calculation of IGBT snubber
Abstract: DSEP ISOPLUS247 dt300
Text: Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS Semiconductor GmbH, Lampertheim Abstract Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as
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IXAN0060
Abstract: series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
Text: Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS Semiconductor GmbH, Lampertheim IXAN0060 Abstract Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as
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IXAN0060
IXAN0060
series connection of mosfet
ISOPLUS247
calculation of IGBT snubber
dt300
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IXAN0009
Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power
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IXAN0009
IXAN0009
0009
ixan0009 2
ixan0009 3
TMS320F2407a
GE SCR Manual
mosfet inverter 2kW 100khz
smps 1kW
schematic diagram inverter 500w USING MOSFET
schematic diagram PWM inverter 500w
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6P060AS
Abstract: marking diode 6a
Text: DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 DPak
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DSEP6-06AS
6P060AS
60747and
20110915a
6P060AS
marking diode 6a
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Untitled
Abstract: No abstract text available
Text: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips
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DSEP12-12BZ
O-263
60747and
20131029a
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Untitled
Abstract: No abstract text available
Text: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips
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DSEP12-12AZ
O-263
60747and
20131029a
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Untitled
Abstract: No abstract text available
Text: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips
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DSEP12-12AZ
O-263
60747and
20131029a
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Untitled
Abstract: No abstract text available
Text: DSEP15-06AS HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips
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DSEP15-06AS
O-263
60747and
20120318a
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Untitled
Abstract: No abstract text available
Text: DSEP15-06BS HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 25 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06BS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips
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DSEP15-06BS
O-263
15-06B
60747and
20130318a
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DSEP15
Abstract: No abstract text available
Text: DSEP15-12CR V RRM = I FAV = t rr = HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 1200 V 15 A 15 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips
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DSEP15-12CR
15-12CR
60747and
20110201a
DSEP15
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Untitled
Abstract: No abstract text available
Text: DSEP40-03AS HiPerFRED VRRM = 300 V I FAV = 40 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP40-03AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips
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DSEP40-03AS
supp200
60747and
20130320b
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Untitled
Abstract: No abstract text available
Text: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips
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DSEP12-12BZ
O-263
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20131029a
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DSEP15
Abstract: No abstract text available
Text: DSEP12-12B HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips
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DSEP12-12B
O-220
60747and
20131029c
DSEP15
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Untitled
Abstract: No abstract text available
Text: DSEP12-12A HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips
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DSEP12-12A
O-220
60747and
20131029b
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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Untitled
Abstract: No abstract text available
Text: DSEP12-12B HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips
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DSEP12-12B
O-220
60747and
20131029c
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Untitled
Abstract: No abstract text available
Text: DSEP15-06B HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 25 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips
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DSEP15-06B
O-220
Antisaturati000
15-06B
60747and
20130318a
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dsep30-12cr
Abstract: DHG30I1200HA DSEP30-12A dsep29-12
Text: DSEP30-12CR V RRM = I FAV = t rr = HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 1200 V 30 A 15 ns 3 DSEP30-12CR Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP30-12CR
60747and
20110201a
dsep30-12cr
DHG30I1200HA
DSEP30-12A
dsep29-12
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Untitled
Abstract: No abstract text available
Text: DSEP30-12CR V RRM = I FAV = t rr = HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 1200 V 30 A 15 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips
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DSEP30-12CR
60747and
20110201a
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dsep12-12a
Abstract: DSEP15-12CR 12CR DSEP12-12B DSEP15
Text: DSEP15-12CR V RRM = I FAV = t rr = HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 1200 V 15 A 15 ns 3 DSEP15-12CR Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP15-12CR
15-12CR
60747and
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dsep12-12a
DSEP15-12CR
12CR
DSEP12-12B
DSEP15
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DSEP2x60-12A
Abstract: dsep2*60-12a DSEP2X61-12A
Text: DSEP2x60-12A V RRM = 1200 V I FAV = 2x 60 A t rr = 40 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DSEP2x60-12A Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP2x60-12A
60747and
20110531b
DSEP2x60-12A
dsep2*60-12a
DSEP2X61-12A
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SOT227B
Abstract: DSEI2X121-02A DSEI12-06A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A DSEP12-12A
Text: klH TEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten\ 495 739-09-95, 644-41-29 electronics flMOAbi FRED (Fast Recovery Epitaxial Diodes) $upMbi IXYS np0M3B0flMTenb f lM a n a 3 0 H p a ö o H M X T e M n e p a T y p Kofl: : IXYS : o t - 40oC f l o + 150oC V f npw [B]
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OCR Scan
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flnana30H
ot-40Â
DSEI12-06A
T0220AC
DSEP12-12A
DSEP30-03A
T0247AD
DSEI60-06A
SOT227B
DSEI2X121-02A
DSEI2X61-12b
DSEI2*61-12
DSEI2X31-12B
DSEI2*61
ixys dsei2x31-06c
DSEP2X61-12A
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