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    J 620 610 TRANSISTOR Search Results

    J 620 610 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    J 620 610 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor TT 3043

    Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak
    Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device


    OCR Scan     		D67FP5 D67FP D67FP6 D67FP7 transistor TT 3043 tt 3043 al 336 IC TT 3043 d67fp6 aj204 638ak PDF

    2SD588

    Abstract: 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		2SD593 2SD596 2SD608 Ir-25 2SD610 2SD588 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571 PDF

    VK200 inductance

    Abstract: vk200 vk200 rfc with 6 turns SD1136 inductor vk200 VK200 4B inductor Voltronics Corp. ATC100B uhf transistor amplifier MATERIAL-3M-K-6098
    Text: S G □ 5C d | S —THOMSON 7^237 0GQD17Q T .0 T~ 1? -// SOLID STATE MICROWAVE SD1136 THOMSON-CSF COMPONENTS CORPORATION Montgomeryvilie; PA 18936 * (215 362-8500 • TW X 510-661-7299 10 W, 12.5 V UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1136 is a 12.5 volt epitaxial silicon NPN planar


    OCR Scan     		SD1136 ATC100B, VK200/19-4B 3M-K-6098 CC-12 VK200 inductance vk200 vk200 rfc with 6 turns inductor vk200 VK200 4B inductor Voltronics Corp. ATC100B uhf transistor amplifier MATERIAL-3M-K-6098 PDF

    2DI100MA-050

    Abstract: 6DI100M050 6DI30MA-050 transistor TH 208
    Text: BIPOLAR TRANSISTOR MODULES Ratings and Specifications m 600 volts class high hFE power transistor modules • B eca use t h is m o d u l e has 10 t im e s o r m o r e t h e c o n v e n t i o n a l DC c u r r e n t ga in , set p r o p o r t i o n a l l y f o r ea ch e le m e n t


    OCR Scan     		6DI30M-050 6DI30MA-050 6DI50M-050 6DI50MA-050 6DI75M-050 6DI75MA-050 6DI100M-050 2DI100MA-050 6DI100M050 transistor TH 208 PDF

    transistor 1971 mitsubishi

    Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		RD01MUS1 520MHz RD01MUS1 520MHz 0-48MAX OT-89 25deg TIO750 transistor 1971 mitsubishi MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994 PDF

    Untitled

    Abstract: No abstract text available
    Text: ATTENTION O B SER V E PRECAUTIONS FO R HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25 /Nov.’02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		RD00HVS1 175MHz RD00HVS1 175MHz 25deg PDF

    j 6815 transistor

    Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .


    OCR Scan     		RD00HVS1 175MHz RD00HVS1 175MHz 48MAX OT-89 j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor PDF

    RUR620

    Abstract: TA49037
    Text: H A R R IS RURD610, RURD615, RURD620, s E M, c o N o u c T o R r u r d 6 1 OS, RURD615S, RURD620S 6A, 100V - 200V Ultrafast Diodes April 1995 Features Packaging • Ultrafast with Soft R ecovery. <30ns


    OCR Scan     		RURD610, RURD615, RURD620, RURD615S, RURD620S O-251 RURD610S, RUR620 TA49037 PDF

    transistor 16933

    Abstract: No abstract text available
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25th/Nov.’02 MITSUBISHI RF POWER MOS FET RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		25th/Nov. RD01MUS1 520MHz RD01MUS1 520MHz 25deg transistor 16933 PDF

    Varistor 7D 471K

    Abstract: 14d 431K varistor transistor TPV 3100 14d 151K varistor 10d 471k 431K20D 7d 241k 14n 221k VARISTOR MVR 14D 391K
    Text: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V


    Original     		UL1449 E222955 UL1414 E197475 E326004 40D/R 34S/R Varistor 7D 471K 14d 431K varistor transistor TPV 3100 14d 151K varistor 10d 471k 431K20D 7d 241k 14n 221k VARISTOR MVR 14D 391K PDF

    2SB630

    Abstract: 2SB710 2SB628 2SB631 2SB632 2SB709 2SD597 63A50
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		Tc-25 2SB630 2SB710 2SB628 2SB631 2SB632 2SB709 2SD597 63A50 PDF

    BC 148 transistor

    Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
    Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


    OCR Scan     		023SbOS BC1211) BC-121 Q60203-Q60203-Q60203-Q60203-Q60203-Q60203 Q60203-Q60203 Q60203 bc121. bc122, bc123 BC 148 transistor transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor PDF

    2sa593

    Abstract: 2SD155 2SC960 2SC959 2SD150 2SC943K 2SC594 2SC943
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		2SD155 ra-40p 600nS 2sa593 2SD155 2SC960 2SC959 2SD150 2SC943K 2SC594 2SC943 PDF

    varistor 511K

    Abstract: No abstract text available
    Text:  Data Sheet Customer： Product : Metal Oxide Varistor - VD Series Size: 05 / 07 / 10 / 14 / 20 Issued Date: 14-Feb-12 Edition : REV.A1 VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH 光頡科技股份有限公司高雄分公司


    Original     		14-Feb-12 varistor 511K PDF

    Untitled

    Abstract: No abstract text available
    Text: SPW11N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 PDF

    502A-J

    Abstract: No abstract text available
    Text: Made in USA 502A-J 4-20 MA THERMOCOUPLE TRANSMITTER 10632ML-01 This device is marked with the international hazard symbol. It is important to read the Setup Guide before installing or commissioning this device as it contains important information relating to safety and EMC.


    Original     		02A-J 10632ML-01 502A-J PDF

    11N60S5

    Abstract: SPI11N60S5
    Text: SPI11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5 PDF

    SPW20N60S5

    Abstract: 20N60S5
    Text: SPW20N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5 PDF

    11N60

    Abstract: 11N60S5 SPW11N60S5 Q67040-S4239 11n6 marking code 68W 70
    Text: SPW11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 11N60 11N60S5 Q67040-S4239 11n6 marking code 68W 70 PDF

    11N60S5

    Abstract: SPB11N60S5 SPP11N60S5
    Text: SPP11N60S5 SPB11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 SPB11N60S5 PDF

    20N60S5

    Abstract: SPP20N60S5 Q67040-S4751 SPB20N60S5 20n60s
    Text: SPP20N60S5 SPB20N60S5 Preliminary data D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge G,1 S,3 • Improved periodic avalanche rating • Extreme dv/dt rated COOLMOS


    Original     		SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 SPP20N60S5 P-TO220-3-1 P-TO263-3-2 20N60S5 Q67040-S4751 20N60S5 Q67040-S4751 SPB20N60S5 20n60s PDF

    TIC 122 Transistor

    Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
    Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


    OCR Scan     		023SbO BC-121 blu122, BC123 0235bOS QQQ41Q3 BC121. BC122, TIC 122 Transistor bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157 PDF

    11N60S5 equivalent

    Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095
    Text: SPI11N60S5 Preliminary data SPP11N60S5, SPB11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·


    Original     		SPI11N60S5 SPP11N60S5, SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 equivalent 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095 PDF

    150LA20A

    Abstract: 250LA20A transistor b1068 480LA80A B1064 180kd07 mov 680kd14 471KD07 mov 200LA20A 230LA40A
    Text: EDAL INDUSTRIES, INC. 51 COMMERCE STREET * EAST HAVEN, CONNECTICUT 06512 * TELEPHONE 203 -467-2591 * FAX (203)-469-5928 Internet: http://www.eemonline.com/edal Email: [email protected] FEATURES APPLICATIONS A wide protecting voltage range. Low leakage current in Preparatory State.


    OCR Scan     		B106-13 150LA20A 250LA20A transistor b1068 480LA80A B1064 180kd07 mov 680kd14 471KD07 mov 200LA20A 230LA40A PDF