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    Toshiba America Electronic Components TJ20A10M3(STA4,Q

    TJ20A10M3(STA4,Q
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    DigiKey TJ20A10M3(STA4,Q Tube
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    Littelfuse Inc SMDJ20A-100

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    Bristol Electronics SMDJ20A-100 722 5
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    J20A10 Datasheets Context Search

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    J20A10M

    Abstract: TJ20A10M3 J20A10 J20A10M3
    Text: J20A10M3 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ J20A10M3 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs|= 50 S (標準)


    Original
    TJ20A10M3 SC-67 2-10U1B J20A10M TJ20A10M3 J20A10 J20A10M3 PDF

    J20A10

    Abstract: J20A10M J20A10M transistor TJ20A10M3
    Text: J20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI J20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original
    TJ20A10M3 J20A10 J20A10M J20A10M transistor TJ20A10M3 PDF

    J20A10M

    Abstract: J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3
    Text: J20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI J20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original
    TJ20A10M3 J20A10M J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3 PDF

    J20A10M transistor

    Abstract: J20A10M J20A10
    Text: J20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI J20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original
    TJ20A10M3 J20A10M transistor J20A10M J20A10 PDF