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    j3305h1

    Abstract: No abstract text available
    Text: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*


    Original     		FJD3305H1 j3305h1 PDF

    j3305

    Abstract: j3305h1 FJD3305H1TM QS 100 NPN Transistor transistor Electronic ballast electronic ballast with npn transistor fjd3
    Text: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*


    Original     		FJD3305H1 j3305 j3305h1 FJD3305H1TM QS 100 NPN Transistor transistor Electronic ballast electronic ballast with npn transistor fjd3 PDF

    j3305

    Abstract: FJD3305H1TM j3305h1 FJD3305H1
    Text: FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted


    Original     		FJD3305H1 FJD3305H1 j3305 FJD3305H1TM j3305h1 PDF