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Vishay Siliconix SQJ459EP-T1_GE3 MOSFET P-CH 60V 52A PPAK SO-8
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DigiKey	SQJ459EP-T1_GE3	Reel	72,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.52638	Buy Now
Vishay Siliconix SQJ459EP-T2_BE3 P-CHANNEL 60-V (D-S) 175C MOSFET
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DigiKey	SQJ459EP-T2_BE3	Cut Tape	9,549		1	1 $1.82 10 $1.159 100 $1.82 1000 $0.56382 10000 $0.56382	Buy Now
	SQJ459EP-T2_BE3	Digi-Reel	9,549		1	1 $1.82 10 $1.159 100 $1.82 1000 $0.56382 10000 $0.56382	Buy Now
	SQJ459EP-T2_BE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.49729	Buy Now
Vishay Siliconix SQJ459EP-T2_GE3 P-CHANNEL 60-V (D-S) 175C MOSFET
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DigiKey	SQJ459EP-T2_GE3	Digi-Reel	3,941		1	1 $1.82 10 $1.159 100 $1.82 1000 $0.56382 10000 $0.56382	Buy Now
	SQJ459EP-T2_GE3	Cut Tape	3,941		1	1 $1.82 10 $1.159 100 $1.82 1000 $0.56382 10000 $0.56382	Buy Now
	SQJ459EP-T2_GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.49729	Buy Now
Vishay Siliconix SQJ459EP-T1_BE3 P-CHANNEL 60-V (D-S) 175C MOSFET
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DigiKey	SQJ459EP-T1_BE3	Cut Tape	2,793		1	1 $1.87 10 $1.19 100 $1.87 1000 $0.5806 10000 $0.5806	Buy Now
	SQJ459EP-T1_BE3	Digi-Reel	2,793		1	1 $1.87 10 $1.19 100 $1.87 1000 $0.5806 10000 $0.5806	Buy Now
New Advantage Corporation	SQJ459EP-T1_BE3		12,000		1	1 - 10 - 100 - 1000 - 10000 $0.6571	Buy Now
Vishay Dale RNC50J4591BSB14 RES 4.59K OHM 1/10W .1% AXIAL
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DigiKey	RNC50J4591BSB14	Bulk			100	1 - 10 - 100 $7.1565 1000 $7.1565 10000 $7.1565	Buy Now
RS	RNC50J4591BSB14	Bulk			100	1 - 10 - 100 $6.84 1000 $6.84 10000 $6.84	Get Quote

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J4.59 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IrL 1540 N Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g	PDF
amplifier MA-920 Abstract: ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier	Original	MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1 amplifier MA-920 ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22	PDF
J449 Abstract: AS030721-39N J657 korin 3214W-1-103E DB-84006L-175 EXCELDRC35C PD84006L-E transistor l54 J387 Text: DB-84006L-175 Evaluation board using PD84006L-E for VHF 2-way radio Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Power gain: 14.0 ± 0.8 dB ■ Efficiency: 59 % - 68 % ■ Load mismatch: 10:1 all phases	Original	DB-84006L-175 PD84006L-E DB-84006L-175 PD84006L-E J449 AS030721-39N J657 korin 3214W-1-103E EXCELDRC35C transistor l54 J387	PDF
MOSFET J162 Abstract: CW12010T0050G Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to	Original	AFT26H160--4S4 AFT26H160-4S4R3 MOSFET J162 CW12010T0050G	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26H160--4S4 AFT26H160-4S4R3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all	Original	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3	PDF
capacitor 1825 Abstract: Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085H capacitor 1825 Nippon capacitors	PDF
transistor j307 Abstract: j352 sk063 Text: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to	Original	AFT18H357--24S AFT18H357-24SR6 transistor j307 j352 sk063	PDF
K 2645 schematic Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H	PDF
Untitled Abstract: No abstract text available Text: BLC8G21LS-160AV Power LDMOS transistor Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.	Original	BLC8G21LS-160AV	PDF
ATC100B100BT500XT Abstract: No abstract text available Text: Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100N ATC100B100BT500XT	PDF
K 2645 schematic circuit Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic circuit DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3	PDF
IrL 1540 N Abstract: IrL 1540 g AN1955 MRF8S18120HR3 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all	Original	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N IrL 1540 g AN1955 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H	PDF

PHILIPS 4312 amplifier Abstract: NCO8703 SOT121 Package BLF246 AN 6752 Philips film capacitors 27 pf METAL FILM RESISTORS PHILIPS 71005 NCO8801 narrow band philips Text: APPLICATION NOTE The BLF246 as an H.F.-S.S.B. amplifier NCO8801 Philips Semiconductors The BLF246 as an H.F.-S.S.B. amplifier CONTENTS 1 SUMMARY 2 INTRODUCTION 3 NARROW BAND TEST AT 28 MHz 4 WIDEBAND OPERATION 5 ACKNOWLEDGEMENT 1998 Mar 23 2 Application Note	Original	BLF246 NCO8801 SCA57 PHILIPS 4312 amplifier NCO8703 SOT121 Package AN 6752 Philips film capacitors 27 pf METAL FILM RESISTORS PHILIPS 71005 NCO8801 narrow band philips	PDF
A114 Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors Text: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 A114 A115 AN1955 JESD22 MRF6S27085H MRF6S27085HSR3 Nippon capacitors	PDF
Untitled Abstract: No abstract text available Text: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage	Original	MD8IC925N MD8IC925N MD8IC925NR1 MD8IC925GNR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier	Original	MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1	PDF
81A7031-50-5F Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	A2T07D160W04S A2T07D160W04SR3 81A7031-50-5F	PDF
NE650103M Abstract: NE650103M-A 68207 j349 Text: NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC PACKAGE PACKAGE OUTLINE 3M • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA 20.32 ± 0.15 • HIGH OUTPUT POWER: 40 dBm TYP 14.27 ± 0.15	Original	NE650103M NE650103M NE650103M-A 68207 j349	PDF
ATC100B100BT500XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W-CDMA base station applications with frequencies from 2110	Original	MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 ATC100B100BT500XT	PDF
AT-600-B Abstract: TD-SCDMA A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 2, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 AT-600-B TD-SCDMA A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1	PDF
2508051107Y0 Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 EKMG630ELL331MJ20S Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HSR3 EKMG630ELL331MJ20S	PDF
transistor NEC D 587 Abstract: 17-33 0952 567 tone NE650103M 68207 Text: NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC PACKAGE PACKAGE OUTLINE 3M • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA 20.32 ± 0.15 • HIGH OUTPUT POWER: 40 dBm TYP 14.27 ± 0.15	Original	NE650103M transistor NEC D 587 17-33 0952 567 tone NE650103M 68207	PDF

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J4.59 Price and Stock

Vishay Siliconix SQJ459EP-T1_GE3

Vishay Siliconix SQJ459EP-T2_BE3

Vishay Siliconix SQJ459EP-T2_GE3

Vishay Siliconix SQJ459EP-T1_BE3

Vishay Dale RNC50J4591BSB14

J4.59 Datasheets Context Search

IrL 1540 N

amplifier MA-920

J449

MOSFET J162

Untitled

Untitled

capacitor 1825

transistor j307

K 2645 schematic

Untitled

ATC100B100BT500XT

K 2645 schematic circuit

Untitled

IrL 1540 N

PHILIPS 4312 amplifier

A114

Untitled

Untitled

81A7031-50-5F

NE650103M

ATC100B100BT500XT

AT-600-B

2508051107Y0

transistor NEC D 587