Untitled
Abstract: No abstract text available
Text: Data Sheet No. 1.044 International HSR Rectifier Series PVT322A Microelectronic Power IC Relay Dual Pole, Normally Open 0-250V, 170mA AC/DC HEXFET POWER MOSFET PHOTOVOLTAIC RELAY PVT322A Features General Description HEXFET Power MOSFET output. Bounce-free operation •
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PVT322A
170mA
PVT322A
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PDF
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.427B International IOR Rectifier JANTX2N6790 HEXFET POWER MOSFET JANTXV2N6790 [REF:MIL-PRF-19500/555] [GENERIC:IRFF220] N - C H AN NEL 200 Volt, 0.80Q HEXFET Product Summary Part Number BV dss H E X F E T technology is the key to International
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JANTX2N6790
JANTXV2N6790
MIL-PRF-19500/555]
IRFF220]
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PDF
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Untitled
Abstract: No abstract text available
Text: I p| j -0 ppi q j- j q pj q J IO R Provisional Data Sheet No. PD-9.423B Rectifier JANTX2N6782 HEXFET POWER MOSFET JANTXV2N6782 [REF:MIL-PRF-19500/556] [GENERIC:IRFF110] N -C H A N N E L 100 Volt, 0.60Q HEXFET Product Summary Part Number H E X F E T technology is the key to International
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JANTX2N6782
JANTXV2N6782
MIL-PRF-19500/556]
IRFF110]
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PDF
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Untitled
Abstract: No abstract text available
Text: HE D I 4Ö 554 5 2 ÛQQflSS2 1 | INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package
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IRF820
IRFS22
IRF823
O-220AB
C-307
IRF820,
IRF821,
IRF822,
IRF823
C-308
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PDF
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Untitled
Abstract: No abstract text available
Text: International Provisional Data Sheet No. PD-9.428B IOR Rectifier JANTX2N6792 HEXFET POWER MOSFET JANTXV2N6792 [REF:MIL-PRF-19500/555] [GENERIC:IRFF320] N -C H A N N E L 400 volt, 1.an HEXFET H E X F E T technology is the key to International Rectifier’s advanced line of power M OSFET transis
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JANTX2N6792
JANTXV2N6792
MIL-PRF-19500/555]
IRFF320]
G02SlfiG
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PDF
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Untitled
Abstract: No abstract text available
Text: Ip| ternati OnOI Provisional Data Sheet No. PD-9.330E Rectifier JANTX2N6770 HEXFET POWER MOSFET JANTXV2N6770 [REF:MIL-PRF-19500/543] [GENERIC:IRF450] IO R N -C H A N N E L 500 Volt, 0.400 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis
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JANTX2N6770
JANTXV2N6770
MIL-PRF-19500/543]
IRF450]
S5452
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PDF
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IRF510 application note
Abstract: irf511 VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 IRF510
Text: HE 0 | MÛS54S2 0 0 0 0 4 3 4 3 | Data Sheet No. PD-9.325J 7 INTERNATIONAL R E C T I F I E R * 7 INTERNATIONAL RECTIFIER 7 - / / I«R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF510 IRF511 IRF5ÌS IRF513
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S54S2
IRF510
IRF511
IRF513
O-220AB
C-189
IRF510,
IRF511,
IRF512,
IRF513
IRF510 application note
VQE22
Gate Drive circuit for irf510
VQE 22
N0540
AN975
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PDF
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J846
Abstract: 20 ampere MOSFET 900Volts JS46
Text: 7294621 POWEREX INC 98D "ifi dF 0271S D ~ | 72=141,21 G D a a V l S b | J846 Powerex, Inc., Hiilis Street, Youngwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 3 Amperes/900 Volts Description O U T L IN E O R A M N O Powerex Single EXMOS™ MOSFET
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0271S
Amperes/900
O-220F
J846
20 ampere MOSFET
900Volts
JS46
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier
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IRFP048N
O-247
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PDF
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a41 smd diode
Abstract: No abstract text available
Text: IntGrnOtiOnOI IOR Rectifier Provisional Data Sheet No. PD-9.1556 HEXFET POWER MOSFET IRFNG50 N -C H A N N E L 1000 Volt, 2.0£i HEXFET Product Summary H E X F E T techn o lo g y is the key to International Rectifier’s advanced line of power M O S F E T transis
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IRFNG50
a41 smd diode
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PDF
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irf4321
Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
Text: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB
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IRF430-433/IRF830-833
MTM/MTP4N45/4N50
T-39-11
O-204AA
O-22QAB
IRF430
IRF431
IRF432
IRF433
MTM4N45
irf4321
4N50
MTM4N50
IRF830
MTP4N50
irf4304
IRF432
IRF430
IRF431
IRF433
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PDF
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Untitled
Abstract: No abstract text available
Text: International Ira*]Rectifier po-aia« IRLIZ24N preliminary HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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IRLIZ24N
O-220
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PDF
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300 volt 5 ampere mosfet
Abstract: J732 20 ampere MOSFET 200 ampere MOSFET mosfet de 120 volts 10a J988 JS88
Text: 7294621 PÓWEREX INC T f l D e | 72TMt.ai DDG57S7 □ m /HBtEX D T"-3?'-/7 J988 Powerex, Inc., Hillls Street, Ybungwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 10 Amperes/450-500 Volts Description. Powerex Single EXMOS™ MOSFET
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OCR Scan
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Amperes/450-500
0D057bE
T-39-11
300 volt 5 ampere mosfet
J732
20 ampere MOSFET
200 ampere MOSFET
mosfet de 120 volts 10a
J988
JS88
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PDF
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4N50
Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB
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34tclt
0e7117
IRF430-433/IRF830-833
MTM/MTP4N45/4N50
t-39-11
O-22QAB
IRF430
IRF431
IRF432
IRF433
4N50
IRF830
irf4321
MTP4N45
IRF430
IRF 5054
MTP4N50
MTM4N50
MK48Z02B-20
IRF431
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PDF
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Untitled
Abstract: No abstract text available
Text: h e D I w a ss4sa a a a a ia a ,_T IN TER N A TION A L s I T-39-11 Provisional Data Sheet No. PD-9,569 r e c t if ie r INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED HEXSense — Current Sense IRC644 Part Number BV q s s F>DS on (D IRC644
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T-39-11
IRC644
333io
AN-959,
AN-961,
AN-962
AN-963.
O-220
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PDF
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irf630
Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
Text: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ MTP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631
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OCR Scan
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IRF230-233/IRF630-633
MTP12N18/12N20
TQ-204AA
O-220AB
IRF630
IRF631
IRF632
IRF633
MTP12N18
MTP12N20
irf630
IRF230
12N20
f630
IRF630-633
IRF231
IRF631
IRF632
IRF633
MTP12N18
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PDF
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IRFJ431
Abstract: IRFJ433 G577 IRFJ430 IRFJ432 t-030u 00DD2
Text: H E D I 4 0 5 5 4 5 2 OGCHSTÖ 5 | Data Sheet No. PD-9.408A IN TER N A TIO N A L R E C T IF IE R T-39-11 INTERNATIONAL RECTIFIER I Q R IRFJ430 HEXFET TRANSISTORS IRFJ431 N-CHANNEL POWER MOSFETs IRFJ432 IRFJ433 Features: 500 Volt, 1.5 Ohm HEXFET T he HEXFET® technology is the key to International
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OCR Scan
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T-39-U
G-579
IRFJ430,
IRFJ431,
IRFJ432,
IRFJ433
554S2
T-39-11
G-580
IRFJ431
G577
IRFJ430
IRFJ432
t-030u
00DD2
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PDF
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irfp064n
Abstract: No abstract text available
Text: International ^Rectifier P D 9 .1 3 8 3 IRFP064N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 5 5 V
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OCR Scan
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IRFP064N
3150utram
MA55455
irfp064n
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PDF
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3s4 MARKING CODE DIODE
Abstract: IRF540NS
Text: PD -9.1342 International [^Rectifier IRF540NS PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss= 100V ^D S o n =
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OCR Scan
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IRF540NS
554S2
023LSD
3s4 MARKING CODE DIODE
IRF540NS
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PDF
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diode H8 10E
Abstract: IRC832 IRC830
Text: H E D I r -' 4 0 5 5 4 5 2 OGQÛ'îBÛ fc, | IN T E R N A T IO N A L Data Sheet No. PD-9.455C R E C T IF IE R INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE AND dv/dt RATED* IRC830 HEXSense - Current Sense C Series od Power MOSFET IR C S3 S SOURCE KELVIN
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OCR Scan
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O-220
Qlll71
IRC830
IRC832
IRC830-007
IRC832-007
IRC830-008
IRC832-008
diode H8 10E
IRC832
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PDF
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RFD3055RLE
Abstract: 12n06 d0420 RFP3055RLE RFD3055RLESM RFP12N06RLE RFD12N06RLE RFD12N06RLESM 12N06RLE
Text: R F D 12N 06R LE , R FD 12N 06R LE S M R F P 12N 06R L E , R F D 3055R L E SE CT OR R FD 3055R LE S M , R F P 3055R L E u a o d i q n M r c r o ° HA RR IS S E M I C O N D May 1992 Features N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs
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OCR Scan
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RFD12N06RLE,
RFD12N06RLESM
RFP12N06RLE,
RFD3055RLE
RFD3055RLESM,
RFP3055RLE
135ii
12N06)
RFD12N06RLESM,
RFD3055RLE
12n06
d0420
RFP3055RLE
RFD3055RLESM
RFP12N06RLE
RFD12N06RLE
RFD12N06RLESM
12N06RLE
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PDF
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Untitled
Abstract: No abstract text available
Text: International SRectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET Power MOSFET • • • • • • Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Vdss = 55 V ^D S o n - 0.045Q
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OCR Scan
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IRFL4105
OT-223
uite201,
Saalburgstrasse157
61350BadHomburgTel:
ViaLiguria49
3150utram
10-02Tan
0316Tel:
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PDF
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Untitled
Abstract: No abstract text available
Text: hternational I sr]Rectifier PD91306 IRFIZ46N preliminary HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated Vdss = 55 V
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OCR Scan
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IRFIZ46N
Liguria49
QQ237Q1
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PDF
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IRF248N
Abstract: IRFIZ48N
Text: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description
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OCR Scan
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IRFIZ48N
O-220
0316Tel:
IRF248N
IRFIZ48N
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PDF
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