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    K 3911 MOSFET Search Results

    K 3911 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    K 3911 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. 1.044 International HSR Rectifier Series PVT322A Microelectronic Power IC Relay Dual Pole, Normally Open 0-250V, 170mA AC/DC HEXFET POWER MOSFET PHOTOVOLTAIC RELAY PVT322A Features General Description HEXFET Power MOSFET output. Bounce-free operation •


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    PVT322A 170mA PVT322A PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.427B International IOR Rectifier JANTX2N6790 HEXFET POWER MOSFET JANTXV2N6790 [REF:MIL-PRF-19500/555] [GENERIC:IRFF220] N - C H AN NEL 200 Volt, 0.80Q HEXFET Product Summary Part Number BV dss H E X F E T technology is the key to International


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    JANTX2N6790 JANTXV2N6790 MIL-PRF-19500/555] IRFF220] PDF

    Untitled

    Abstract: No abstract text available
    Text: I p| j -0 ppi q j- j q pj q J IO R Provisional Data Sheet No. PD-9.423B Rectifier JANTX2N6782 HEXFET POWER MOSFET JANTXV2N6782 [REF:MIL-PRF-19500/556] [GENERIC:IRFF110] N -C H A N N E L 100 Volt, 0.60Q HEXFET Product Summary Part Number H E X F E T technology is the key to International


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    JANTX2N6782 JANTXV2N6782 MIL-PRF-19500/556] IRFF110] PDF

    Untitled

    Abstract: No abstract text available
    Text: HE D I 4Ö 554 5 2 ÛQQflSS2 1 | INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package


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    IRF820 IRFS22 IRF823 O-220AB C-307 IRF820, IRF821, IRF822, IRF823 C-308 PDF

    Untitled

    Abstract: No abstract text available
    Text: International Provisional Data Sheet No. PD-9.428B IOR Rectifier JANTX2N6792 HEXFET POWER MOSFET JANTXV2N6792 [REF:MIL-PRF-19500/555] [GENERIC:IRFF320] N -C H A N N E L 400 volt, 1.an HEXFET H E X F E T technology is the key to International Rectifier’s advanced line of power M OSFET transis­


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    JANTX2N6792 JANTXV2N6792 MIL-PRF-19500/555] IRFF320] G02SlfiG PDF

    Untitled

    Abstract: No abstract text available
    Text: Ip| ternati OnOI Provisional Data Sheet No. PD-9.330E Rectifier JANTX2N6770 HEXFET POWER MOSFET JANTXV2N6770 [REF:MIL-PRF-19500/543] [GENERIC:IRF450] IO R N -C H A N N E L 500 Volt, 0.400 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis­


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    JANTX2N6770 JANTXV2N6770 MIL-PRF-19500/543] IRF450] S5452 PDF

    IRF510 application note

    Abstract: irf511 VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 IRF510
    Text: HE 0 | MÛS54S2 0 0 0 0 4 3 4 3 | Data Sheet No. PD-9.325J 7 INTERNATIONAL R E C T I F I E R * 7 INTERNATIONAL RECTIFIER 7 - / / I«R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF510 IRF511 IRF5ÌS IRF513


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    S54S2 IRF510 IRF511 IRF513 O-220AB C-189 IRF510, IRF511, IRF512, IRF513 IRF510 application note VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 PDF

    J846

    Abstract: 20 ampere MOSFET 900Volts JS46
    Text: 7294621 POWEREX INC 98D "ifi dF 0271S D ~ | 72=141,21 G D a a V l S b | J846 Powerex, Inc., Hiilis Street, Youngwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 3 Amperes/900 Volts Description O U T L IN E O R A M N O Powerex Single EXMOS™ MOSFET


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    0271S Amperes/900 O-220F J846 20 ampere MOSFET 900Volts JS46 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier


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    IRFP048N O-247 PDF

    a41 smd diode

    Abstract: No abstract text available
    Text: IntGrnOtiOnOI IOR Rectifier Provisional Data Sheet No. PD-9.1556 HEXFET POWER MOSFET IRFNG50 N -C H A N N E L 1000 Volt, 2.0£i HEXFET Product Summary H E X F E T techn o lo g y is the key to International Rectifier’s advanced line of power M O S F E T transis­


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    IRFNG50 a41 smd diode PDF

    irf4321

    Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
    Text: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB


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    IRF430-433/IRF830-833 MTM/MTP4N45/4N50 T-39-11 O-204AA O-22QAB IRF430 IRF431 IRF432 IRF433 MTM4N45 irf4321 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433 PDF

    Untitled

    Abstract: No abstract text available
    Text: International Ira*]Rectifier po-aia« IRLIZ24N preliminary HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


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    IRLIZ24N O-220 PDF

    300 volt 5 ampere mosfet

    Abstract: J732 20 ampere MOSFET 200 ampere MOSFET mosfet de 120 volts 10a J988 JS88
    Text: 7294621 PÓWEREX INC T f l D e | 72TMt.ai DDG57S7 □ m /HBtEX D T"-3?'-/7 J988 Powerex, Inc., Hillls Street, Ybungwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 10 Amperes/450-500 Volts Description. Powerex Single EXMOS™ MOSFET


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    Amperes/450-500 0D057bE T-39-11 300 volt 5 ampere mosfet J732 20 ampere MOSFET 200 ampere MOSFET mosfet de 120 volts 10a J988 JS88 PDF

    4N50

    Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB


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    34tclt 0e7117 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 t-39-11 O-22QAB IRF430 IRF431 IRF432 IRF433 4N50 IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431 PDF

    Untitled

    Abstract: No abstract text available
    Text: h e D I w a ss4sa a a a a ia a ,_T IN TER N A TION A L s I T-39-11 Provisional Data Sheet No. PD-9,569 r e c t if ie r INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED HEXSense — Current Sense IRC644 Part Number BV q s s F>DS on (D IRC644


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    T-39-11 IRC644 333io AN-959, AN-961, AN-962 AN-963. O-220 PDF

    irf630

    Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
    Text: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ MTP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631


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    IRF230-233/IRF630-633 MTP12N18/12N20 TQ-204AA O-220AB IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 irf630 IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18 PDF

    IRFJ431

    Abstract: IRFJ433 G577 IRFJ430 IRFJ432 t-030u 00DD2
    Text: H E D I 4 0 5 5 4 5 2 OGCHSTÖ 5 | Data Sheet No. PD-9.408A IN TER N A TIO N A L R E C T IF IE R T-39-11 INTERNATIONAL RECTIFIER I Q R IRFJ430 HEXFET TRANSISTORS IRFJ431 N-CHANNEL POWER MOSFETs IRFJ432 IRFJ433 Features: 500 Volt, 1.5 Ohm HEXFET T he HEXFET® technology is the key to International


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    T-39-U G-579 IRFJ430, IRFJ431, IRFJ432, IRFJ433 554S2 T-39-11 G-580 IRFJ431 G577 IRFJ430 IRFJ432 t-030u 00DD2 PDF

    irfp064n

    Abstract: No abstract text available
    Text: International ^Rectifier P D 9 .1 3 8 3 IRFP064N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 5 5 V


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    IRFP064N 3150utram MA55455 irfp064n PDF

    3s4 MARKING CODE DIODE

    Abstract: IRF540NS
    Text: PD -9.1342 International [^Rectifier IRF540NS PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss= 100V ^D S o n =


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    IRF540NS 554S2 023LSD 3s4 MARKING CODE DIODE IRF540NS PDF

    diode H8 10E

    Abstract: IRC832 IRC830
    Text: H E D I r -' 4 0 5 5 4 5 2 OGQÛ'îBÛ fc, | IN T E R N A T IO N A L Data Sheet No. PD-9.455C R E C T IF IE R INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE AND dv/dt RATED* IRC830 HEXSense - Current Sense C Series od Power MOSFET IR C S3 S SOURCE KELVIN


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    O-220 Qlll71 IRC830 IRC832 IRC830-007 IRC832-007 IRC830-008 IRC832-008 diode H8 10E IRC832 PDF

    RFD3055RLE

    Abstract: 12n06 d0420 RFP3055RLE RFD3055RLESM RFP12N06RLE RFD12N06RLE RFD12N06RLESM 12N06RLE
    Text: R F D 12N 06R LE , R FD 12N 06R LE S M R F P 12N 06R L E , R F D 3055R L E SE CT OR R FD 3055R LE S M , R F P 3055R L E u a o d i q n M r c r o ° HA RR IS S E M I C O N D May 1992 Features N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs


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    RFD12N06RLE, RFD12N06RLESM RFP12N06RLE, RFD3055RLE RFD3055RLESM, RFP3055RLE 135ii 12N06) RFD12N06RLESM, RFD3055RLE 12n06 d0420 RFP3055RLE RFD3055RLESM RFP12N06RLE RFD12N06RLE RFD12N06RLESM 12N06RLE PDF

    Untitled

    Abstract: No abstract text available
    Text: International SRectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET Power MOSFET • • • • • • Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Vdss = 55 V ^D S o n - 0.045Q


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    IRFL4105 OT-223 uite201, Saalburgstrasse157 61350BadHomburgTel: ViaLiguria49 3150utram 10-02Tan 0316Tel: PDF

    Untitled

    Abstract: No abstract text available
    Text: hternational I sr]Rectifier PD91306 IRFIZ46N preliminary HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated Vdss = 55 V


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    IRFIZ46N Liguria49 QQ237Q1 PDF

    IRF248N

    Abstract: IRFIZ48N
    Text: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description


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    IRFIZ48N O-220 0316Tel: IRF248N IRFIZ48N PDF