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    K12A53D Price and Stock

    Toshiba America Electronic Components TK12A53D(STA4,Q,M)

    MOSFET N-CH 525V 12A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK12A53D(STA4,Q,M) Tube 1
    • 1 $3.2
    • 10 $3.2
    • 100 $3.2
    • 1000 $1.08998
    • 10000 $1.04375
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    Mouser Electronics TK12A53D(STA4,Q,M)
    • 1 $2.9
    • 10 $2.72
    • 100 $1.34
    • 1000 $1.04
    • 10000 $1.04
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    Toshiba America Electronic Components TK12A53D(STA4

    Trans MOSFET N-CH 525V 12A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK12A53D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK12A53D(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.24415
    • 1000 $1.12725
    • 10000 $1.12725
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    K12A53D Datasheets Context Search

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    K12A53D

    Abstract: TK12A53D
    Text: K12A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A53D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.5Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK12A53D SC-67 2-10U1B 20070701-JA K12A53D TK12A53D PDF

    K12A53D

    Abstract: TK12A53D
    Text: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK12A53D K12A53D TK12A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK12A53D PDF

    K12A53D

    Abstract: No abstract text available
    Text: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK12A53D K12A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK12A53D PDF

    K12A53D

    Abstract: TK12A53D
    Text: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK12A53D K12A53D TK12A53D PDF

    K12A53D

    Abstract: TK12A53D
    Text: K12A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A53D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.5Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK12A53D SC-67 2-10U1B K12A53D TK12A53D PDF