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Toshiba America Electronic Components TK12A55D(STA4,Q,M) MOSFET N-CH 550V 12A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK12A55D(STA4,Q,M)	Tube			1	1 $3.43 10 $3.43 100 $3.43 1000 $1.1824 10000 $1.1475	Buy Now
Mouser Electronics	TK12A55D(STA4,Q,M)					1 $3.11 10 $2.92 100 $1.45 1000 $1.14 10000 $1.14	Get Quote
Toshiba America Electronic Components TK12A55D(STA4 Trans MOSFET N-CH 550V 12A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK12A55D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK12A55D(STA4	Tube		32 Weeks	50	1 - 10 - 100 $1.36782 1000 $1.2393 10000 $1.2393	Buy Now

K12A55D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TK12A55D	PDF
Untitled Abstract: No abstract text available Text: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TK12A55D	PDF
K12A55D Abstract: No abstract text available Text: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TK12A55D K12A55D	PDF
Untitled Abstract: No abstract text available Text: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 550 V)	Original	TK12A55D	PDF
K12A55D Abstract: No abstract text available Text: K12A55D 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K12A55D ○ スイッチングレギュレータ用 : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 1.14 ± 0.15 0.69 ± 0.15 Ф0.2 M A 記号定格単位ドレイン・ソース間電圧	Original	TK12A55D K12A55D	PDF