Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K12A60U Search Results

    SF Impression Pixel

    K12A60U Price and Stock

    Toshiba America Electronic Components TK12A60U(Q,M)

    MOSFET N-CH 600V 12A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK12A60U(Q,M) Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    K12A60U Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K12A60U

    Abstract: TK12A60U k12a60 code MCV marking MCV
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV PDF

    K12A60U

    Abstract: K12A k12a60
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U K12A k12a60 PDF

    K12A60U

    Abstract: k12a60 TK12A60U VDS208
    Text: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


    Original     		TK12A60U SC-67 2-10U1B 20070701-JA K12A60U k12a60 TK12A60U VDS208 PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


    Original     		TK12A60U PDF

    k12a60

    Abstract: K12A60U TK12A60U transistor K12A
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U transistor K12A PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    k12a60

    Abstract: K12A60U TK12A60U k12a6 K12A
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U k12a6 K12A PDF

    k12a60

    Abstract: TK12A60U K12A60U
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 TK12A60U K12A60U PDF