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Catalog Datasheet	MFG & Type	PDF	Document Tags
TK12D60U Abstract: No abstract text available Text: K12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12D60U Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)	Original	PDF	TK12D60U TK12D60U
TK12D60U Abstract: K12D Text: K12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12D60U Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON resistance: RDS (ON) = 0.36Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)	Original	PDF	TK12D60U TK12D60U K12D
TK12D60U Abstract: K12D60U Text: K12D60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12D60U ○ スイッチングレギュレータ用オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) 3.2 2.8 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)	Original	PDF	TK12D60U 20070701-JA TK12D60U K12D60U
K12D Abstract: No abstract text available Text: K12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K12D60U Switching Regulator Applications Unit: mm 10.0±0.3 A 9.5±0.2 Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)	Original	PDF	TK12D60U K12D
Untitled Abstract: No abstract text available Text: K12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12D60U Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)	Original	PDF	TK12D60U