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Toshiba America Electronic Components TK14A55D(STA4,Q,M) MOSFET N-CH 550V 14A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK14A55D(STA4,Q,M)	Tube	22		1	1 $4.01 10 $4.01 100 $4.01 1000 $1.41896 10000 $1.4175	Buy Now
Mouser Electronics	TK14A55D(STA4,Q,M)					1 $3.65 10 $3.52 100 $1.73 1000 $1.41 10000 $1.41	Get Quote
Toshiba America Electronic Components TK14A55D(STA4 Trans MOSFET N-CH 550V 14A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK14A55D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK14A55D(STA4	Tube		32 Weeks	50	1 - 10 - 100 $1.68966 1000 $1.5309 10000 $1.5309	Buy Now

K14A55D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k14a55 Abstract: K14A55D TK14A55D transistor K14A55D Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)	Original	TK14A55D k14a55 K14A55D TK14A55D transistor K14A55D	PDF
K14A55D Abstract: TK14A55D Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)	Original	TK14A55D K14A55D TK14A55D	PDF
K14A55D Abstract: TK14A55D transistor K14A55D Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)	Original	TK14A55D K14A55D TK14A55D transistor K14A55D	PDF
transistor K14A55D Abstract: No abstract text available Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)	Original	TK14A55D transistor K14A55D	PDF
K14A55D Abstract: TK14A55D transistor K14A55D Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)	Original	TK14A55D K14A55D TK14A55D transistor K14A55D	PDF
K14A55D Abstract: TK14A55D Text: K14A55D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K14A55D ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.31Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.5S (標準)	Original	TK14A55D SC-67 2-10U1B 20070701-JA K14A55D TK14A55D	PDF