K20A60T
Abstract: k20a60 TK20A60T TK20A60
Text: K20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20A60T Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) • • • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)
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TK20A60T
K20A60T
k20a60
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TK20A60
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k20a60t
Abstract: tk20a60t
Text: K20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20A60T Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) • • • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)
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TK20A60T
k20a60t
tk20a60t
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K20A60T
Abstract: TK20A60T VDD400
Text: K20A60T 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOS K20A60T ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)
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TK20A60T
SC-67
2-10U1B
20070701-JA
K20A60T
TK20A60T
VDD400
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