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    K20D60U Price and Stock

    Toshiba America Electronic Components TK20D60U(STA4,Q)

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    Bristol Electronics TK20D60U(STA4,Q) 790
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    Toshiba America Electronic Components TK20D60UQ

    SILICON N CHANNEL MOS TYPE (DTMOS II) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TK20D60UQ 150
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    Toshiba America Electronic Components TK20D60U(Q)

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    Component Electronics, Inc TK20D60U(Q) 23
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    K20D60U Datasheets Context Search

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    Abstract: No abstract text available
    Text: K20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20D60U Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V)


    Original     		TK20D60U PDF

    K20D60U

    Abstract: TK20D60U
    Text: K20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20D60U Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		TK20D60U K20D60U TK20D60U PDF

    K20D60U

    Abstract: TK20D60U
    Text: K20D60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K20D60U ○ スイッチングレギュレータ用 単位: mm 10.0 ± 0.3 9.5 ± 0.2 z オン抵抗が低い。 : RDS (ON) = 0.165 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)


    Original     		TK20D60U 20070701-JA K20D60U TK20D60U PDF

    K20D60U

    Abstract: TK20D60U
    Text: K20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20D60U Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		TK20D60U K20D60U TK20D60U PDF