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Toshiba America Electronic Components TK20J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK20J60W,S1VE	Tube	33		1	1 $5.95 10 $5.95 100 $5.95 1000 $2.40624 10000 $2.40624	Buy Now
Mouser Electronics	TK20J60W,S1VE		24			1 $5.95 10 $5.95 100 $2.79 1000 $2.4 10000 $2.4	Buy Now
Toshiba America Electronic Components TK20J60U(F) MOSFET N-CH 600V 20A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK20J60U(F)	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	TK20J60U(F)	Tube			50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK20J60W MOSFET N-Channel Enhancement Mode 600V 3-Pin TO-3P - Trays (Alt: TK20J60W,S1VE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK20J60W	Tray		20 Weeks	25	1 - 10 - 100 $2.7335 1000 $2.59875 10000 $2.59875	Buy Now
Toshiba America Electronic Components TK20J60W5,S1VQ(O MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip One Stop	TK20J60W5,S1VQ(O	Bulk	28			1 $4.02 10 $3.26 100 $3.15 1000 $3.15 10000 $3.15	Buy Now

K20J60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K20J60T Abstract: k20j60 TK20J60T SC-65 Text: K20J60T 東芝電界効果トランジスタシリコンNチャネルMOS形 DTMOS K20J60T ○ スイッチングレギュレータ用単位: mm 漏れ電流が低い。 : IDSS = 100 A (最大) (VDS = 600V) 取り扱いが簡単な､エンハンスメントタイプです。	Original	TK20J60T -55150/W K20J60T k20j60 TK20J60T SC-65	PDF
K20J60U Abstract: k20j60 TK20J60U power Diode 200V 10A SC-65 Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20J60U Switching Regulator Applications Unit: mm VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V (Note 1) ID 20 Pulse (t = 1 ms) (Note 1) IDP 40 A 1 Drain power dissipation (Tc = 25°C)	Original	TK20J60U K20J60U k20j60 TK20J60U power Diode 200V 10A SC-65	PDF
K20J60T Abstract: TK20J60T k20j60 SC-65 Text: K20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20J60T Switching Regulator Applications Unit: mm 20.0±0.3 9.0 2.0 3.3max. 1.0 2.0 Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20J60T K20J60T TK20J60T k20j60 SC-65	PDF
K20J60T Abstract: k20j60 TK20 tk20j60t Text: K20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20J60T Switching Regulator Applications Unit: mm 20.0±0.3 9.0 2.0 3.3max. 1.0 2.0 Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20J60T K20J60T k20j60 TK20 tk20j60t	PDF
k20j60 Abstract: K20J60U Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit	Original	TK20J60U k20j60 K20J60U	PDF
K20J60U Abstract: k20j60 TK20J60U SC-65 k20j Text: K20J60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K20J60U ○ スイッチングレギュレータ用単位: mm 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準) z 漏れ電流が低い。 : IDSS = 100 A (最大) (VDS = 600V)	Original	TK20J60U K20J60U k20j60 TK20J60U SC-65 k20j	PDF
Untitled Abstract: No abstract text available Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25	Original	TK20J60U	PDF
k20j60u Abstract: 10A16 k20j60 TK20J60U SC-65 3012S Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25	Original	TK20J60U k20j60u 10A16 k20j60 TK20J60U SC-65 3012S	PDF