Untitled
Abstract: No abstract text available
Text: K2Q60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K2Q60D ○ スイッチングレギュレータ用 6.5 ± 0.2 オン抵抗が低い。 : RDS (ON) = 3.2 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 1.0 S (標準)
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TK2Q60D
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K2Q60D
Abstract: TK2Q60D
Text: K2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K2Q60D Switching Regulator Applications 1.5 ± 0.2 Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)
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TK2Q60D
K2Q60D
TK2Q60D
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K2Q60D
Abstract: TK2Q60D
Text: K2Q60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K2Q60D ○ スイッチングレギュレータ用 6.5 ± 0.2 オン抵抗が低い。 : RDS (ON) = 3.3 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 1.0 S (標準)
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TK2Q60D
K2Q60D
TK2Q60D
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Untitled
Abstract: No abstract text available
Text: K2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K2Q60D Switching Regulator Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 1.6 Low drain-source ON-resistance: RDS (ON) = 3.2 (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.)
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TK2Q60D
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Untitled
Abstract: No abstract text available
Text: K2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K2Q60D Switching Regulator Applications 1.5 ± 0.2 Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)
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TK2Q60D
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PDF
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K2Q60D
Abstract: TK2Q60D
Text: K2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K2Q60D Switching Regulator Applications 1.5 ± 0.2 Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.3 Ω(typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)
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TK2Q60D
K2Q60D
TK2Q60D
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