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    Infineon Technologies AG K30T60

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    K30T6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k30t60

    Abstract: IKW30N60T k30t6 Q67040-S4717 K-30-T IGBT IKW30N60T
    Text: IKW30N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    IKW30N60T k30t60 k30t6 Q67040-S4717 K-30-T IGBT IKW30N60T PDF

    IkW30N60T

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IKW30N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C 


    Original
    IKW30N60T IkW30N60T PDF

    k30t60

    Abstract: IKW30N60T IGBT IKW30N60T 22545 st 679-10 power diode 10a
    Text: TrenchStop Series IKW30N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    IKW30N60T Dev-04 k30t60 IKW30N60T IGBT IKW30N60T 22545 st 679-10 power diode 10a PDF

    k30t60

    Abstract: IGBT IKW30N60T IKW30N60T k30t6 12V 30A diode k30t igbt 1546 PG-TO-247-3-21 "Power Diode" 500V 20A 40a 15v diode
    Text: IKW30N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    IKW30N60T k30t60 IGBT IKW30N60T IKW30N60T k30t6 12V 30A diode k30t igbt 1546 PG-TO-247-3-21 "Power Diode" 500V 20A 40a 15v diode PDF

    k30t6

    Abstract: No abstract text available
    Text: TrenchStop Series IKW30N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode •            C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    IKW30N60T k30t6 PDF

    k30t60

    Abstract: No abstract text available
    Text: IKW30N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    IKW30N60T k30t60 PDF