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Vishay Intertechnologies CRCW0603100RFKEA Thick Film Resistors - SMD 1/10watt 100ohms 1%
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TTI	CRCW0603100RFKEA	Reel	5,220,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00355	Buy Now
Amphenol Corporation 88-552044-05I Circular MIL Spec Connector 5P ST PLUG PIN SZ 15
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TTI	88-552044-05I	Each	439		1	1 $58.07 10 $45.79 100 $37.01 1000 $37.01 10000 $37.01	Buy Now
Murata Manufacturing Co Ltd DMS-30PC-0-GS-C Digital Panel Meters DIGITAL PNL MTR -0.2V TO 0.2V
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TTI	DMS-30PC-0-GS-C	Bulk	12		1	1 $60.86 10 $52.5 100 $47 1000 $46.08 10000 $46.08	Buy Now
Dialight 5640300111F LED Circuit Board Indicators RED DIFFUSED
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TTI	5640300111F	Bulk			470	1 - 10 - 100 - 1000 $1.48 10000 $1.48	Buy Now
Vishay Intertechnologies CW010500R0JE73 Wirewound Resistors - Through Hole 500 OHM 5% 10W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CW010500R0JE73	Reel			500	1 - 10 - 100 - 1000 $1.2 10000 $1.17	Buy Now

K3669 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K3669 Abstract: 2SK3669 Text: K3669 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSVII K3669 ○ スイッチングレギュレータ用 ○ スイッチングアンプ用 ○ モータドライブ用順方向伝達アドミタンスが高い。 : \|Yfs\| = 6 S (標準)	Original	2SK3669 K3669 2SK3669	PDF
K3669 Abstract: 2SK3669 MJ1005 Text: K3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) · High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669 K3669 2SK3669 MJ1005	PDF
K3669 Abstract: K366 2SK3669 Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669 K3669 K366 2SK3669	PDF
K366 Abstract: K3669 2SK3669 Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: \|Yfs\| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)	Original	2SK3669 K366 K3669 2SK3669	PDF
K3669 Abstract: 2SK3669 MJ1005 Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669 K3669 2SK3669 MJ1005	PDF
2SK3669 Abstract: K3669 MJ1005 Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: \|Yfs\| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)	Original	2SK3669 2SK3669 K3669 MJ1005	PDF
K3669 Abstract: No abstract text available Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669 K3669	PDF
Untitled Abstract: No abstract text available Text: K3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669	PDF