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    NMB Technologies Corporation 29SM-K379-99V

    STEP MOTOR HYBRID DUAL SHAFT 24V
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    DigiKey 29SM-K379-99V Bulk 10
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    Newark 29SM-K379-99V Bulk 10
    • 1 $108.43
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    Sager 29SM-K379-99V 1
    • 1 $102.56
    • 10 $93.37
    • 100 $82.32
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    Toshiba America Electronic Components 2SK3799

    Mosfet, N, 900V, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. Of Pins:3Pins Rohs Compliant: Yes |Toshiba 2SK3799
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    Vishay Intertechnologies CRCW0603232KFKEA

    Thick Film Resistors - SMD 1/10watt 232Kohms 1%
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    TTI CRCW0603232KFKEA Reel 45,000 5,000
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    Bourns Inc 5721-RC

    Power Inductors - Leaded 250uH 15%
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    TTI 5721-RC Tray 256 1
    • 1 $12.03
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    Vishay Intertechnologies CRCW201040R2FKEF

    Thick Film Resistors - SMD 3/4watt 40.2ohms 1%
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    TTI CRCW201040R2FKEF Reel 4,000
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    K3799 Datasheets Context Search

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    K3799

    Abstract: 2sk3799 K379
    Text: K3799 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ K3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		2SK3799 SC-67 2-10U1B K3799 2sk3799 K379 PDF

    k3799

    Abstract: No abstract text available
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 k3799 PDF

    K3799

    Abstract: 2sk3799
    Text: K3799 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ K3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		2SK3799 SC-67 2-10U1B K3799 2sk3799 PDF

    K3799

    Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 K3799 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379 PDF

    k3799

    Abstract: K3799 Transistor
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3799 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.0Ω (typ.) High forward transfer admittance: |Yfs| = 7.0S (typ.)


    Original     		2SK3799 k3799 K3799 Transistor PDF

    K3799

    Abstract: transistor 2SK3799 K3799 Transistor 2SK3799
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 K3799 transistor 2SK3799 K3799 Transistor 2SK3799 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 PDF

    K3799

    Abstract: 2sk3799 2SK3799 equivalent transistor 2SK3799
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 K3799 2sk3799 2SK3799 equivalent transistor 2SK3799 PDF

    k3799

    Abstract: No abstract text available
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 k3799 PDF

    K3799

    Abstract: 2sk3799 2SK3799 equivalent K3799 Transistor
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 K3799 2sk3799 2SK3799 equivalent K3799 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 PDF