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    K3863 Price and Stock

    Vishay Intertechnologies CRCW060333R2FKEA

    Thick Film Resistors - SMD 1/10watt 33.2ohms 1%
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    TTI CRCW060333R2FKEA Reel 3,430,000 5,000
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    Chemi-Con EKY-500ELL102ML25S

    Aluminum Electrolytic Capacitors - Radial Leaded 50VDC 1000uF Tol 20% 16x25mm
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    TTI EKY-500ELL102ML25S Bulk 500 500
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    Vishay Intertechnologies SMBG170CA-E3/5B

    ESD Protection Diodes / TVS Diodes 600W 170V 5% Bidir
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    TTI SMBG170CA-E3/5B Reel 3,200
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    Dialight 5680004803F

    LED Circuit Board Indicators 3mm CBI
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    TTI 5680004803F Bulk 350
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    Vishay Intertechnologies CRCW20106K19FKEF

    Thick Film Resistors - SMD 3/4watt 6.19Kohms 1% 100ppm
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    TTI CRCW20106K19FKEF Reel 4,000
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    K3863 Datasheets Context Search

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    K3863

    Abstract: 2SK3863 2SK386 K386
    Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)


    Original     		PDF 2SK3863 K3863 2SK3863 2SK386 K386

    k3863

    Abstract: K386 2SK3863
    Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3863 k3863 K386 2SK3863

    K3863

    Abstract: K386 2SK3863
    Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3863 K3863 K386 2SK3863

    K3863

    Abstract: 2SK3863
    Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.)


    Original     		PDF 2SK3863 K3863 2SK3863

    k3863

    Abstract: 2SK3863
    Text: K3863 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3863 単位: mm ○ スイッチングレギュレータ用 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 : RDS (ON) = 1.35 Ω (標準) 5.5 ± 0.2 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)


    Original     		PDF 2SK3863 k3863 2SK3863

    k386

    Abstract: k3863
    Text: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3863 k386 k3863