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    K4E641612 Price and Stock

    Samsung Semiconductor K4E641612E-TI50

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    Samsung Electro-Mechanics K4E641612D-TC60

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    Bristol Electronics K4E641612D-TC60 39 1
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    Samsung Semiconductor K4E641612E-TL60

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    Quest Components K4E641612E-TL60 70
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    • 100 $10.2305
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    Samsung Semiconductor K4E641612D-TC60

    IC,DRAM,EDO,4MX16,CMOS,TSOP,50PIN,PLASTIC
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    Quest Components K4E641612D-TC60 31
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    Samsung Semiconductor K4E641612D-TL60

    EDO DRAM, 4MX16, 60NS, CMOS, PDSO50
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    Quest Components K4E641612D-TL60 19
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    K4E641612 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4E641612B Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612B-L Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612B-TC Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612B-TC45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Original PDF
    K4E641612B-TC50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns Original PDF
    K4E641612B-TC60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns Original PDF
    K4E641612B-TL45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Original PDF
    K4E641612B-TL50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Original PDF
    K4E641612B-TL60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Original PDF
    K4E641612C Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-50 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-60 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-L Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-T Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-T45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-T50 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-T60 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-TC Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612C-TC45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Original PDF

    K4E641612 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4E641612E

    Abstract: K4E661612E K4E641612E-T
    Text: Industrial Temperature K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E661612E K4E641612E 16bit 4Mx16 400mil K4E641612E K4E641612E-T PDF

    K4E641612D-TC

    Abstract: K4E641612D K4E641612D-T K4E661612D K4E641612
    Text: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D-TC K4E641612D K4E641612D-T K4E641612 PDF

    K4E641612C

    Abstract: K4E641612C-T K4E661612C K4E661612C-T
    Text: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E661612C K4E641612C 16bit 4Mx16 400mil K4E641612C K4E641612C-T K4E661612C-T PDF

    K4E641612B

    Abstract: K4E661612B
    Text: K4E661612B, K4E641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E661612B, K4E641612B 16bit 4Mx16 400mil K4E641612B K4E661612B PDF

    K4E641612D

    Abstract: K4E641612D-T K4E661612D
    Text: Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden


    Original     		K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D K4E641612D-T PDF

    K4E641612E

    Abstract: K4E661612E
    Text: K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E661612E K4E641612E 16bit 4Mx16 400mil K4E641612E PDF

    K4E641612D-T

    Abstract: K4E661612D K4E641612D
    Text: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D-T K4E641612D PDF

    K4E641612C

    Abstract: K4E641612C-T K4E661612C K4E661612C-T
    Text: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E661612C K4E641612C 16bit 4Mx16 400mil K4E641612C K4E641612C-T K4E661612C-T PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F080 8 4DT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4DT1-C DRAM MODULE M366F080(8)4DT1-C


    Original     		M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits 4Mx16bits PDF

    K4E641612D

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4DT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4DT1-C DRAM MODULE M366F040(8)4DT1-C


    Original     		M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits K4E641612D PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F080 8 4CT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4CT1-C DRAM MODULE M366F080(8)4CT1-C


    Original     		M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372F0405CT0-C Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th.(4th.) generation of 64M(16M) components are applied to this module. M372F0405CT0-C DRAM MODULE M372F0405CT0-C


    Original     		M372F0405CT0-C 4Mx72 4Mx16 M372F0405CT0-C 4Mx72bits PDF

    K4E641612D-T

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0405DT1-C M374F0405DT1-C EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0405DT1-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M374F0405DT1-C consists of four CMOS 4Mx16bits DRAMs


    Original     		M374F0405DT1-C M374F0405DT1-C 4Mx16 4Mx72bits 4Mx16bits 300mil 168-pin K4E641612D-T PDF

    capacitor taa

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404BT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.2 June 1998 DRAM MODULE M466F0404BT2-L M466F0404BT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404BT2-L is a 4Mx64bits Dynamic


    Original     		M466F0404BT2-L 4Mx64 4Mx16 M466F0404BT2-L 4Mx16, 4Mx64bits cycles/128ms, capacitor taa PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0405CT1-C Unbuffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied to this module. M374F0405CT1-C DRAM MODULE M374F0405CT1-C


    Original     		M374F0405CT1-C 4Mx72 4Mx16 M374F0405CT1-C 4Mx72bits PDF

    K4E641612D-TL 50

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0804DT1-L 8Byte 8Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0804DT1-L DRAM MODULE M466F0804DT1-L M466F0804DT1-L EDO Mode


    Original     		M466F0804DT1-L 8Mx64 4Mx16 M466F0804DT1-L 4Mx16, 8Mx64bits K4E641612D-TL 50 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372F0405DT0-C Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th.(4th.) generation of 64M(16M) components are applied to this module. M372F0405DT0-C DRAM MODULE M372F0405DT0-C


    Original     		M372F0405DT0-C 4Mx72 4Mx16 M372F0405DT0-C 4Mx72bits PDF

    K4E641612D-TL 50

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404DT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0(Dec. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0404DT2-L DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode


    Original     		M466F0404DT2-L 4Mx64 4Mx16 M466F0404DT2-L 4Mx16, 4Mx64bits K4E641612D-TL 50 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404DT2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		M466F0404DT2-L M466F0404DT2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372F0405DT0-C M372F0405DT0-C EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372F0405DT0-C consists of four 4Mx16bits & two 4Mx4bits


    Original     		M372F0405DT0-C M372F0405DT0-C 4Mx16 4Mx72bits 4Mx16bits 400mil 168-pin PDF

    K4E641612D-T

    Abstract: k4e641612dt
    Text: DRAM MODULE M366F080 8 4DT1-C M366F080(8)4DT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4DT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4DT1-C consists of eight CMOS 4Mx16bits


    Original     		M366F080 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin K4E641612D-T k4e641612dt PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0805BT1-C Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M374F0805BT1-C DRAM MODULE M374F0805BT1-C


    Original     		M374F0805BT1-C 8Mx72 4Mx16 M374F0805BT1-C 8Mx72bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0804CT1-L 8Byte 8Mx64 SODIMM 4Mx16 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0804CT1-L DRAM MODULE M466F0804CT1-L M466F0804CT1-L EDO Mode


    Original     		M466F0804CT1-L 8Mx64 4Mx16 M466F0804CT1-L 4Mx16, 8Mx64bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F080 8 4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic


    Original     		M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits 4Mx16bits PDF