K4E661611D Search Results

K4E661611D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4E661611D		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet		Original	PDF
K4E661611D-TC60		Samsung Electronics	4M x 16-Bit Cmos Dynamic Ram With Extended Data Out		Original	PDF

K4E661611D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K4E641611D Abstract: K4E661611D Text: K4E661611D, K4E641611D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this	Original	K4E661611D, K4E641611D 16bit 4Mx16 K4E66161 400mil K4E641611D K4E661611D	PDF

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K4E641611D

Abstract: K4E661611D
Text: K4E661611D, K4E641611D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this

Original

K4E661611D, K4E641611D 16bit 4Mx16 K4E66161 400mil K4E641611D K4E661611D

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