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Samsung Semiconductor K4S641632K-UC75
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Bristol Electronics	K4S641632K-UC75		183			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	K4S641632K-UC75		140			1 $9 10 $9 100 $5.55 1000 $5.55 10000 $5.55	Buy Now
Samsung Semiconductor K4S641632K-UC60
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Quest Components	K4S641632K-UC60		76			1 $10.08 10 $10.08 100 $6.216 1000 $6.216 10000 $6.216	Buy Now
	K4S641632K-UC60		5			1 $15 10 $11 100 $11 1000 $11 10000 $11	Buy Now
Samsung Semiconductor K4S641632KUI75 1M X 16BIT X 4 BANKS SDRAM Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54
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ComSIT USA	K4S641632KUI75		2,435			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S641632KUC75 64MBIT K-DIE SDRAM Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54
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ComSIT USA	K4S641632KUC75		894			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Electronics Co. Ltd K4S641632K-UC60 Electronic Component
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ComSIT USA	K4S641632K-UC60		883			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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K4S641632K Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4S641632K		Samsung Electronics	64Mb K-die SDRAM		Original	PDF
K4S641632K-UC50		Samsung Electronics	64Mb K-die SDRAM		Original	PDF
K4S641632K-UC60000		Samsung Electronics	64Mb K-die SDRAM		Original	PDF
K4S641632K-UC75		Samsung Electronics	64Mb K-die SDRAM		Original	PDF
K4S641632K-UC75000		Samsung Electronics	64Mb K-die SDRAM		Original	PDF
K4S641632K-UI60		Samsung Electronics	64Mb K-die SDRAM		Original	PDF
K4S641632K-UL75		Samsung Electronics	64Mb K-die SDRAM		Original	PDF
K4S641632K-UP75		Samsung Electronics	64Mb K-die SDRAM		Original	PDF

K4S641632K Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K4S641632K Abstract: K4S640832K K4S641632 Text: K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K4S640832K K4S641632K A10/AP K4S641632K K4S640832K K4S641632
K4S641632K-T Abstract: Synchronous DRAM and Samsung Text: K4S641632K Industrial Synchronous DRAM 64Mb K-die SDRAM Specification Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	K4S641632K A10/AP K4S641632K-T Synchronous DRAM and Samsung
K4S641632k uc60 Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N Text: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM	Original	PDF	4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
K4S641632K-UC75 Abstract: h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0 Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Cluster Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in cluster transfer mode.	Original	PDF	H8SX/1668R H8SX/166products REJ06B0694-0100/Rev K4S641632K-UC75 h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0
h8sx Abstract: R1LV1616RSD-7SR K4S641632K-UC75 Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Repeat Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in repeat transfer mode.	Original	PDF	H8SX/1668R H8SX/1668R REJ06B0693-0100/Rev h8sx R1LV1616RSD-7SR K4S641632K-UC75
K4S641632K-UC75 Abstract: h8sx R1LV1616RSD-7SR K4S641632KUC75 Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Normal Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in normal transfer mode.	Original	PDF	H8SX/1668R H8SX/1668Rproducts REJ06B0691-0100/Rev K4S641632K-UC75 h8sx R1LV1616RSD-7SR K4S641632KUC75
K4S641632K-UC75 Abstract: samsung k4s641632k-uc75 h8sx R1LV1616RSD-7SR Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Block Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in block transfer mode.	Original	PDF	H8SX/1668R H8SX/1668R REJ06B0692-0100/Rev K4S641632K-UC75 samsung k4s641632k-uc75 h8sx R1LV1616RSD-7SR
K5W1G Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION	Original	PDF	BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
K4S641632K-UC75 Abstract: R1LV1616RSD-7SR LV161 h8sx Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Extended Repeat Area Function Introduction The extended repeat area function of the EXDMAC in normal transfer mode is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area.	Original	PDF	H8SX/1668R REJ06B0745-0100/Rev K4S641632K-UC75 R1LV1616RSD-7SR LV161 h8sx
K4S641632K-UC75 Abstract: SAMSUNG K4S641632K-UC75 K4S641632K R1LV1616RSD-7SR h8sx uc75 LV1616RSD-7SR Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Offset Addition Introduction Data are transferred by the EXDMAC function from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area using normal transfer mode where the transfer address is updated by adding a specified offset.	Original	PDF	H8SX/1668R REJ06B0695-0100/Rev K4S641632K-UC75 SAMSUNG K4S641632K-UC75 K4S641632K R1LV1616RSD-7SR h8sx uc75 LV1616RSD-7SR
K4S641632K-UC75 Abstract: K4S641632K _INITSCT Text: APPLICATION NOTE H8SX Family Synchronous DRAM Operation after Cancellation of Deep Software Standby Mode Introduction This application note describes the method for accessing synchronous DRAM SDRAM after cancellation of deep software standby mode. This method makes it possible to avoid problems related to the period of Bφ and SDRAMφ output instability	Original	PDF	H8SX/1668R REJ06B0814-0100/Rev K4S641632K-UC75 K4S641632K _INITSCT