Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K6A53D Search Results

    SF Impression Pixel

    K6A53D Price and Stock

    Toshiba America Electronic Components TK6A53D(STA4,Q,M)

    MOSFET N-CH 525V 6A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK6A53D(STA4,Q,M) Tube 1
    • 1 $1.98
    • 10 $1.98
    • 100 $1.98
    • 1000 $0.62319
    • 10000 $0.54
    		Buy Now
    Mouser Electronics TK6A53D(STA4,Q,M)
    • 1 $1.87
    • 10 $1.81
    • 100 $0.775
    • 1000 $0.568
    • 10000 $0.54
    		Get Quote

    Toshiba America Electronic Components TK6A53D(STA4

    Trans MOSFET N-CH 525V 6A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK6A53D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK6A53D(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $0.64368
    • 1000 $0.5832
    • 10000 $0.5832
    		Buy Now

    K6A53D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6A53D

    Abstract: TK6A53D
    Text: K6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧


    Original     		TK6A53D K6A53D TK6A53D PDF

    K6A53D

    Abstract: TK6A53D
    Text: K6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧


    Original     		TK6A53D K6A53D TK6A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D PDF

    K6A53D

    Abstract: TK6A53D
    Text: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D K6A53D TK6A53D PDF

    K6A53D

    Abstract: K6A5 TK6A53D
    Text: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D K6A53D K6A5 TK6A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D PDF