Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K8A55 Search Results

    SF Impression Pixel

    K8A55 Price and Stock

    Toshiba America Electronic Components TK8A55DA(STA4,Q,M)

    MOSFET N-CH 550V 7.5A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK8A55DA(STA4,Q,M) Tube 48 1
    • 1 $2
    • 10 $2
    • 100 $2
    • 1000 $0.715
    • 10000 $0.715
    		Buy Now
    Mouser Electronics TK8A55DA(STA4,Q,M)
    • 1 $2
    • 10 $2
    • 100 $0.882
    • 1000 $0.742
    • 10000 $0.742
    		Get Quote

    Toshiba America Electronic Components TK8A55DA(STA4

    Trans MOSFET N-CH 550V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK8A55DA(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK8A55DA(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $0.85228
    • 1000 $0.7722
    • 10000 $0.7722
    		Buy Now

    Toshiba America Electronic Components TK8A55DA(STA4QM)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TK8A55DA(STA4QM) 145
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    K8A55 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k8a55da

    Abstract: TK8A55DA K8A55D k8a55 TK8A55D
    Text: K8A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K8A55DA ○ スイッチングレギュレータ用 単位: mm : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 1.14 ± 0.15 0.69 ± 0.15 Ф0.2 M A 絶対最大定格 (Ta = 25℃)


    Original     		TK8A55DA k8a55da TK8A55DA K8A55D k8a55 TK8A55D PDF

    TK8A55DA

    Abstract: No abstract text available
    Text: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK8A55DA TK8A55DA PDF

    TK8A55DA

    Abstract: k8a55da
    Text: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK8A55DA TK8A55DA k8a55da PDF

    k8a55

    Abstract: BA251 samsung nor flash BA253 BA217 BA155 ba198
    Text: Rev. 1.0, Nov. 2010 K8A56 57 ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K8A56 256Mb 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh 0070000h-007FFFFh k8a55 BA251 samsung nor flash BA253 BA217 BA155 ba198 PDF

    k8a55da

    Abstract: TK8A55DA K8A55D k8a55 TK8A55D TK8A55
    Text: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK8A55DA k8a55da TK8A55DA K8A55D k8a55 TK8A55D TK8A55 PDF