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BA99 Abstract: No abstract text available Text: Preliminary FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	K8A6415ET 54MHz A0-A21 00000FH 00001FH 00002FH 000000H BA99
T5371 Abstract: K8A6415EBB Text: Application Note June. ‘05 Rising & Falling Time of Output Pin with 90nm Technology Product June , 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.	Original	PDF	415ETB, K8A6415EBB) 128Mb/64Mb K8A2815ETB, K8A2815EBB, K8A6415ETB, T5371 K8A6415EBB
SAMSUNG MCP Abstract: MCP Samsung CM1453-04CP CMD Text: Application Note for OTP Program June, 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in in Memory Memory Technology	Original	PDF	K8A5615ETA, K8A5615EBA, K8A2815ETB, K8A2815EBB, K8A6415ETB, K8A6415EBB SAMSUNG MCP MCP Samsung CM1453-04CP CMD
samsung nor flash Abstract: BA102 BA127 Diode BA134 samsung nor K8A6415EBB Text: NOR FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8A6415ET couldre17. 54MHz A0-A21 00000FH 00001FH 00002FH 000000H samsung nor flash BA102 BA127 Diode BA134 samsung nor K8A6415EBB